7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 8, 2014
IRF7842PbF
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 16. Gate Charge Test Circuit
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET
®
Power MOSFETs
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
* V
GS
= 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Fig 17. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2 Qgd Qgodr
8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 8, 2014
IRF7842PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
.013
.050 BAS IC
.0532
.0040
.2284
.0099
.016
.1968
.1574
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
1.27 B AS IC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MI N MAX
MILLIMETERSINCHES
MI N MAX
DIM
e
c .0075 .0098 0.19 0.25
.025 BAS IC 0.635 B AS IC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L
8X c
y
0.25 [.010]
CAB
e1
A
A1
8X b
C
0.10 [.004]
4312
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OU T L I NE CONF OR MS T O J E DE C OU T L INE MS -01 2AA.
NOT ES:
1. DIMENS IONING & T OLE RANCING PER AS ME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIME T ER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
5 DIME NS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
6 DIME NS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RU S IONS NOT TO EXCEE D 0.25 [.010].
7 DIME NS ION IS T HE LE NGT H OF L E AD F OR S OLDE RING T O
A S UBS T RAT E.
MOLD PROT RU S IONS NOT TO EXCEE D 0.15 [.006].
8X 1.78 [.070]
DAT E CODE (YWW)
XXXX
INTERNATIONAL
RECT IFIER
LOGO
F 7101
Y = LAS T DIGIT OF THE YEAR
PART NUMBER
LOT CODE
WW = WE E K
EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 8, 2014
IRF7842PbF
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at:
http://www.irf.com/package/

IRF7842PBF

Mfr. #:
Manufacturer:
Infineon / IR
Description:
MOSFET 40V 1 N-CH HEXFET 5mOhms 33nC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet