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CPC3701C

P1-P3P4-P5
I
NTEGRATED
C
IRCUITS
D
IVISION
www.ixysic.com
DS-CPC3701-R06
1
CPC3701
60V, Depletion-Mode, N-Channel
Vertical DMOS FET
V
(BR)DSX
/
V
(BR)DGX
R
DS(on)
(max)
I
DSS
(min) Package
60V 1 600mA SOT-89
Applications
Features
Description
Ordering Information
Circuit Symbol
• Ignition Modules
• Normally-On Switches
• Solid State Relays
• Converters
• Security
• Power Supplies
• Depletion Mode Device Offers Low R
DS(on)
at Cold Temperatures
• Low On-Resistance: 1 max. at 25ºC
• High Input Impedance
• Low V
GS(off)
Voltage: -1.4 to -3.1V
• Small Package Size SOT-89
The CPC3701 is an N-channel, depletion mode, field
effect transistor (FET) that utilizes IXYS Integrated
Circuits Division’s proprietary third-generation vertical
DMOS process. The third-generation process realizes
world class, high voltage MOSFET performance
in an economical silicon gate process. Our vertical
DMOS process yields a robust device, with high input
impedance, for use in high-power applications. The
CPC3701 is a highly reliable FET device that has
been used extensively in our Solid State Relays for
industrial and security applications.
The CPC3701 has a minimum breakdown voltage of
60V, and is available in the SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Package Pinout (SOT-89)
S
G
D
G
D
S
D
Part # Description
CPC3701CTR N-Channel Depletion Mode FET, SOT-89 Pkg.
Tape and Reel (1000/Reel)
I
NTEGRATED
C
IRCUITS
D
IVISION
www.ixysic.com
2
R06
CPC3701
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to the
device. Functional operation of the device at conditions beyond
those indicated in the operational sections of this data sheet is
not implied.
Absolute Maximum Ratings @ 25ºC
Electrical Characteristics @ 25ºC (Unless Otherwise Noted)
Parameter Ratings Units
Drain-to-Source Voltage 60 V
P
Gate-to-Source Voltage ±15 V
P
Pulsed Drain Current 1 A
Total Package Dissipation
1
1.1 W
Operational Temperature -55 to +125 ºC
Storage Temperature -55 to +125 ºC
1
Mounted on 1"x1" FR4 board.
Parameter Symbol Conditions Min Typ Max Units
Drain-to-Source Breakdown Voltage V
(BR)DSX
V
GS
= -5.5V, I
D
=100µA 60 - - V
Gate-to-Source Off Voltage V
GS(off)
V
DS
= 5V, I
D
=1A -1.4 - -3.1 V
Change in V
GS(off)
with Temperature dV
GS(off)
/dT V
DS
= 5V, I
D
=1A - - 4.5 mV/ºC
Gate Body Leakage Current I
GSS
V
GS
=±15V, V
DS
=0V - - 100 nA
Drain-to-Source Leakage Current I
D(off)
V
GS
= -5.5V, V
DS
=60V - - 1 µA
V
GS
= -5V, V
DS
=40V, T
A
=125ºC - - 1 mA
Saturated Drain-to-Source Current I
DSS
V
GS
= 0V, V
DS
=15V 600 - - mA
Static Drain-to-Source On-State Resistance R
DS(on)
V
GS
= 0V, I
D
=300mA
--1
Change in R
DS(on)
with Temperature dR
DS(on)
/dT - - 1.1 %/ºC
Turn-On Delay Time t
d(on)
V
DS
= 25V
I
D
= 300mA
V
GS
= 0V to -10V
R
gen
= 50
-
-70
ns
Rise Time t
r
-40
Turn-Off Delay Time t
d(off)
-50
Fall Time t
f
- 150
Source-Drain Diode Voltage Drop V
SD
V
GS
= -5V, I
SD
=300mA - 0.6 1.8 V
Thermal Resistance (Junction to Ambient) R
JA
- - 90 - ºC/W
Switching Waveform & Test Circuit
90%
10%
90% 90%
10%10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
on
t
d(on)
t
off
t
d(off)
INPUT
INPUT
OUTPUT
0V
V
DS
R
gen
0V
-10V
t
f
t
r
I
NTEGRATED
C
IRCUITS
D
IVISION
CPC3701
www.ixysic.com
3
R06
PERFORMANCE DATA* @ 25ºC (Unless Otherwise Noted)
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifi cations, please
contact our application department.
Temperature (ºC)
-40 -20 0 20 40 60 80 100
Threshold Voltage (V)
-2.40
-2.35
-2.30
-2.25
-2.20
-2.15
-2.10
-2.05
Threshold Voltage vs. Temperature
(I
DS
=1PA)
Voltage (V)
0.01 0.1 1 10 100
Current (A)
0.01
0.1
1
Forward Safe Operating Bias
(V
GS
=0V)
V
DS
(V)
0.0 0.5 1.0 1.5 2.0 2.5
I
D
(A)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Output Characteristics
V
GS
=0V
V
GS
=-1V
V
GS
=-0.5V
V
GS
=-1.5V
V
GS
=-2V
V
GS
=-2.5V
V
GS
=-3V
Temperature (ºC)
0 20 40 60 80 100 120 140
Power (W)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Power Dissipation vs. Temperature
Temperature (ºC)
-40 -20 0 20 40 60 80 100
Blocking Voltage (V
P
)
72
74
76
78
80
82
Breakdown Voltage (V
DS
) vs. Temperature
(V
GS
=-5V, I
DS
=10PA)
Temperature (ºC)
-40 -20 0 20 40 60 80 100
Leakage current (nA)
0
20
40
60
80
100
120
Leakage Current (I
DS
) vs. Temperature
(V
GS
=-5V, V
DS
=60V)
V
DS
(V)
0 1020304050
Capacitance (pF)
0
100
200
300
400
500
Capacitance vs. Drain-Source Voltage
(V
GS
=-5V)
CISS
COSS
P1-P3P4-P5

CPC3701C

Mfr. #:
Buy CPC3701C
Manufacturer:
IXYS Integrated Circuits
Description:
MOSFET N Channel FET 250V, 360mA
Lifecycle:
New from this manufacturer.
Delivery:
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