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TPD4E004DRYR

P1-P3P4-P6P7-P9P10-P10
October 2010 Doc ID 3082 Rev 9 1/10
10
SM6T
Transil™
Features
■ Peak pulse power:
– 600 W (10/1000 µs)
– 4 kW (8/20 µs)
■ Breakdown voltage range: from 6.8 V to 220 V
■ Unidirectional and bidirectional types
■ Low leakage current:
– 0.2 µA at 25 °C
– 1 µA at 85 °C
■ Operating T
j max
: 150 °C
■ High power capability at T
jmax
:
– 515 W (10/1000 µs)
■ JEDEC registered package outline
Complies with the following standards
■ IEC 61000-4-2 level 4:
– 15 kV (air discharge)
– 8 kV (contact discharge)
■ IEC 61000-4-5
■ MIL STD 883G, method 3015-7: class 3B:
– 25 kV HBM (human body model)
■ UL 497B, file number: QVGQ2.E136224
■ Resin meets UL 94, V0
■ MIL-STD-750, method 2026 soldererability
■ EIA STD RS-481 and IEC 60286-3 packing
■ IPC 7531 footprint
Description
The SM6T Transil series has been designed to
protect sensitive equipment against electrostatic
discharges according to IEC 61000-4-2 and MIL
STD 883, method 3015, and electrical overstress
according to IEC 61000-4-4 and 5. These devices
are more generally used against surges below
600 W (10/1000 µs).
Planar technology makes these devices suitable
for high-end equipment and SMPS where low
leakage current and high junction temperature are
required to provide reliability and stability over
time.
SM6T are packaged in SMB (SMB footprint in
accordance with IPC 7531 standard).
TM: Transil is a trademark of STMicroelectronics
K
A
Unidirectional
Bidirectional
SMB
(JEDEC DO-214AA)
www.st.com
Characteristics SM6T
2/10 Doc ID 3082 Rev 9
1 Characteristics
Figure 1. Electrical characteristics - definitions
Figure 2. Pulse definition for electrical characteristics
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
P
PP
Peak pulse power dissipation
(1)
T
j
initial = T
amb
600 W
T
stg
Storage temperature range -65 to 150
°CT
j
Operating junction temperature range -55 to 150
T
L
Maximum lead temperature for soldering during 10 s. 260
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Table 2. Thermal resistance
Symbol Parameter Value Unit
R
th(j-l)
Junction to leads 20 °C/W
R
th(j-a)
Junction to ambient on printed circuit on recommended pad layout 100 °C/W
V
CL
V
BR
V
RM
I
RM
I
R
I
PP
V
I
I
RM
I
R
I
PP
V
RM
V
BR
V
CL
V
CL
V
BR
V
RM
I
RM
I
R
I
PP
V
I
I
RM
I
R
I
PP
V
RM
V
BR
V
CL
V
CL
V
BR
V
RM
I
RM
I
R
I
PP
V
I
I
F
V
F
V
CL
V
BR
V
RM
I
RM
I
R
I
PP
V
I
I
F
V
F
Unidirectional
Bidirectional
Symbol Parameter
V Stand-off voltage
V Breakdown voltage
V Clamping voltage
I Leakage current @ V
I Peak pulse current
T Voltage temperature coefficient
V Forward voltage drop
R Dynamic resistance
RM
BR
CL
RM RM
PP
F
D
α
Repetitive pulse current
t
r
= rise time (µs)
t
p
= pulse duration time (µs)
t
r
t
p
SM6T Characteristics
Doc ID 3082 Rev 9 3/10
Table 3. Electrical characteristics, parameter values (T
amb
= 25 °C)
Order code
I
RM
max@V
RM
V
BR
@I
R
(1)
V
CL
@I
PP
10/1000 µs
R
D
10/1000 µs
V
CL
@I
PP
8/20 µs
R
D
8/20 µs
αT
(2)
25 °C 85 °C min typ max max max max
µA V V mA V
(3)
A
(4)
Ω V
(3)
A
(4)
Ω 10-4/ °C
SM6T6V8A/CA 20 50 5.8 6.45 6.8 7.14 10 10.5 57 0.059 13.4 298 0.021 5.7
SM6T7V5A/CA 20 50 6.4 7.13 7.5 7.88 10 11.3 53 0.065 14.5 276 0.024 6.1
SM6T10A/CA 20 50 8.55 9.5 10 10.5 1 14.5 41 0.098 18.6 215 0.038 7.3
SM6T12A/CA 0.2 1 10.2 11.4 12 12.6 1 16.7 36 0.114 21.7 184 0.049 7.8
SM6T15A/CA 0.2 1 12.8 14.3 15 15.8 1 21.2 28 0.193 27.2 147 0.078 8.4
SM6T18A/CA 0.2 1 15.3 17.1 18 18.9 1 25.2 24 0.263 32.5 123 0.111 8.8
SM6T22A/CA 0.2 1 18.8 20.9 22 23.1 1 30.6 20 0.375 39.3 102 0.159 9.2
SM6T24A/CA 0.2 1 20.5 22.8 24 25.2 1 33.2 18 0.444 42.8 93 0.189 9.4
SM6T27A/CA 0.2 1 23.1 25.7 27 28.4 1 37.5 16 0.569 48.3 83 0.240 9.6
SM6T30A/CA 0.2 1 25.6 28.5 30 31.5 1 41.5 14.5 0.690 53.5 75 0.293 9.7
SM6T33A/CA 0.2 1 28.2 31.4 33 34.7 1 45.7 13.1 0.840 59.0 68 0.357 9.8
SM6T36A/CA 0.2 1 30.8 34.2 36 37.8 1 49.9 12 1.01 64.3 62 0.427 9.9
SM6T39A/CA 0.2 1 33.3 37.1 39 41.0 1 53.9 11.1 1.16 69.7 57 0.504 10.0
SM6T56A/CA 0.2 1 47.6 53.2 56 58.8 1 76.6 7.8 2.28 100 40 1.030 10.0
SM6T68A/CA 0.2 1 58.1 64.6 68 71.4 1 92 6.5 3.17 121 33 1.503 10.4
SM6T75A/CA 0.2 1 64.1 71.3 75 78.8 1 103 5.8 4.17 134 30 1.84 10.5
SM6T100A/CA 0.2 1 85.5 95.0 100 105 1 137 4.4 7.27 178 22.5 3.24 10.6
SM6T150A/CA 0.2 1 128 143 150 158 1 207 2.9 16.9 265 15 7.13 10.8
SM6T200A/CA 0.2 1 171 190 200 210 1 274 2.2 29.1 353 11.3 12.7 10.8
SM6T220A/CA 0.2 1 188 209 220 231 1 328 2 48.5 388 10.3 15.2 10.8
1. Pulse test : t
p
< 50 ms
2. To calculate V
BR
versus junction temperature, use the following formula: V
BR
@ T
J
= V
BR
@ 25°C
x (1 + αT x (T
J
– 25)).
3. To calculate maximum clamping voltage at other surge level, use the following formula: V
CL
= R
D
x I
PP
+ V
BRmax.
4. Surge capability given for both directions for unidirectional and bidirectional types.
P1-P3P4-P6P7-P9P10-P10

TPD4E004DRYR

Mfr. #:
Buy TPD4E004DRYR
Manufacturer:
Texas Instruments
Description:
TVS Diodes / ESD Suppressors 4Ch ESD Prot Array
Lifecycle:
New from this manufacturer.
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