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BC847CW/MIX

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Nexperia
BC847 series
45 V, 100 mA NPN general-purpose transistors
BC847_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved.
Product data sheet Rev. 10 — 2 March 2017
4 / 16
5 Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 50 V
V
CEO
collector-emitter voltage open base - 45 V
V
EBO
emitter-base voltage open collector - 6 V
I
C
collector current - 100 mA
I
CM
peak collector current single pulse; t
p ≤ 1 ms
- 200 mA
I
BM
peak base current single pulse; t
p ≤ 1 ms
- 100 mA
total power dissipation
SOT23
[1]
- 250 mW
SOT323
[1]
- 200 mW
P
tot
SOT883
T
amb
≤ 25 °C
[2]
- 250 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature -65 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.
[2] Device mounted on an PCB with 60 μm copper strip line, standard footprint.
6 Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
thermal resistance from junction
to ambient
SOT23
[1]
- - 500 K/W
SOT323
[1]
- - 625 K/W
R
th(j-a)
SOT883
in free air
[2]
- - 500 K/W
[1] Device mounted on an FR4 PCB; single-sided copper; tin-plated and standard footprint.
[2] Device mounted on an PCB with 60 μm copper strip line, standard footprint.
Nexperia
BC847 series
45 V, 100 mA NPN general-purpose transistors
BC847_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved.
Product data sheet Rev. 10 — 2 March 2017
5 / 16
7 Characteristics
Table 8. Characteristics
T
amb
= 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
CB
= 30 V; I
E
= 0 A - - 15 nAI
CBO
collector-base
cut-off current
V
CB
= 30 V; I
E
= 0 A; T
j
= 150 °C - - 5 μA
I
EBO
emitter-base
cut-off current
V
EB
= 5 V; I
C
= 0 A - - 100 nA
DC current gain
h
FE
group A - 170 -
h
FE
group B - 280 -
h
FE
group C
V
CE
= 5 V; I
C
= 10 μA
- 420 -
DC current gain 110 - 800
h
FE
group A 110 180 220
h
FE
group B 200 290 450
h
FE
h
FE
group C
V
CE
= 5 V; I
C
= 2 mA
420 520 800
I
C
= 10 mA; I
B
= 0.5 mA - 90 200 mVV
CEsat
collector-emitter
saturation voltage
I
C
= 100 mA; I
B
= 5 mA
[1]
- 200 400 mV
I
C
= 10 mA; I
B
= 0.5 mA
[2]
- 700 - mVV
BEsat
base-emitter saturation
voltage
I
C
= 100 mA; I
B
= 5 mA
[2]
- 900 - mV
V
CE
= 5 V; I
C
= 2 mA
[2]
580 660 700 mVV
BE
base-emitter voltage
V
CE
= 5 V; I
C
= 10 mA - - 770 mV
f
T
transition frequency V
CE
= 5 V; I
C
= 10 mA; f = 100 MHz 100 - - MHz
C
c
collector capacitance V
CB
= 10 V; I
E
= i
e
= 0 A; f = 1 MHz - - 1.5 pF
C
e
emitter capacitance V
EB
= 0.5 V; I
C
= i
c
= 0 A; f = 1 MHz - 11 - pF
NF noise figure I
C
= 200 μA; V
CE
= 5 V; R
S
= 2 kΩ; f =
1 kHz; B = 200Hz
- 2 10 dB
[1] pulsed; t
p
≤ 300 μs; δ ≤ 0.02
[2] V
BE
decreases by approximately 2 mV/K with increasing temperature
Nexperia
BC847 series
45 V, 100 mA NPN general-purpose transistors
BC847_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved.
Product data sheet Rev. 10 — 2 March 2017
6 / 16
mgt723
10
- 1
1 10 10
2
10
3
I
C
(mA)
0
400
300
200
100
h
FE
(1)
(2)
(3)
V
CE
= 5 V
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= -55 °C
Figure 1. Group A: DC current gain as a function of
collector current; typical values
mgt724
10
- 1
1 10 10
2
10
3
I
C
(mA)
0
1200
1000
800
600
400
200
V
BE
(mV)
(1)
(2)
(3)
V
CE
= 5 V
(1) T
amb
= -55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 150 °C
Figure 2. Group A: Base-emitter voltage as a function of
collector current; typical values
10
3
10
2
10
mgt725
10
- 1
1 10 10
2
10
3
I
C
(mA)
V
CEsat
(mV)
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= -55 °C
Figure 3. Group A: Collector-emitter saturation voltage
as a function of collector current; typical values
mgt726
10
- 1
1 10 10
2
10
3
I
C
(mA)
0
1200
1000
800
600
400
200
V
BEsat
(mV)
(1)
(2)
(3)
I
C
/I
B
= 10
(1) T
amb
= -55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 150 °C
Figure 4. Group A: Base-emitter saturation voltage as a
function of collector current; typical values
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

BC847CW/MIX

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Nexperia
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