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SIZ926DT-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P14
SiZ926DT
www.vishay.com
Vishay Siliconix
S17-0334-Rev. B, 06-Mar-17
1
Document Number: 68127
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual N-Channel 25 V (D-S) MOSFETs
FEATURES
• TrenchFET
®
Gen IV power MOSFETs
• 100 % R
g
and UIS tested
• Optimized Q
gs
/Q
gs
ratio improves switching
characteristics
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• CPU core power
• Computer / server peripherals
•POL
• Synchronous buck converter
• Telecom DC/DC
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257
). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 68 °C/W for channel-1 and 57 °C/W for channel-2.
g. T
C
= 25 °C.
PRODUCT SUMMARY
CHANNEL-1 CHANNEL-2
V
DS
(V) 25 25
R
DS(on)
max. () at V
GS
= 10 V 0.00480 0.00220
R
DS(on)
max. () at V
GS
= 4.5 V 0.00790 0.00335
Q
g
typ. (nC) 5.9 12.5
I
D
(A)
a, g
40 60
Configuration Dual
PowerPAIR
®
6 x 5
Top View
1
6 mm
1
6 mm
5 mm
Bottom View
1
G
1
2
D
1
4
D
1
3
D
1
S
1
/D
2
(Pin 9)
D
1
S
2
5
S
2
6
G
2
8
S
2
7
D
1
S
2
N-Channel 2
MOSFET
G
1
S
1
/D
2
G
2
N-Channel 1
MOSFET
ORDERING INFORMATION
Package PowerPAIR 6 x 5
Lead (Pb)-free and halogen-free SiZ926DT-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL CHANNEL-1 CHANNEL-2 UNIT
Drain-source voltage V
DS
25 25
V
Gate-source voltage V
GS
+16, -12 +16, -12
Continuous drain current (T
J
= 150 °C)
T
C
= 25 °C
I
D
40
a
60
a
A
T
C
= 70 °C 40
a
60
a
T
A
= 25 °C 22
b, c
37
b, c
T
A
= 70 °C 17.5
b, c
30
b, c
Pulsed drain current (100 μs pulse width) I
DM
100 170
Continuous source drain diode current
T
C
= 25 °C
I
S
16.8 33.6
T
A
= 25 °C 3.2
b, c
4
b, c
Single pulse avalanche current
L = 100 mH
I
AS
15 28
Single pulse avalanche energy E
AS
11 39 mJ
Maximum power dissipation
T
C
= 25 °C
P
D
20.2 40
W
T
C
= 70 °C 12.9 25.8
T
A
= 25 °C 3.8
b, c
4.8
b, c
T
A
= 70 °C 2.4
b, c
3.1
b, c
Operating junction and storage temperature range T
J
, T
stg
-55 to +150
°C
Soldering recommendations (peak temperature)
d
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL
CHANNEL-1 CHANNEL-2
UNIT
TYP. MAX. TYP. MAX.
Maximum junction-to-ambient
b, f
t 10 s R
thJA
26 33 21 26
°C/W
Maximum junction-to-case (drain) Steady state R
thJC
4.7 6.2 2.5 3.1
SiZ926DT
www.vishay.com
Vishay Siliconix
S17-0334-Rev. B, 06-Mar-17
2
Document Number: 68127
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0 V, I
D
= 250 μA Ch-1 25 - -
V
V
GS
= 0 V, I
D
= 250 μA Ch-2 25 - -
V
DS
Temperature coefficient V
DS
/T
J
I
D
= 250 μA Ch-1 - 19 -
mV/°C
I
D
= 250 μA Ch-2 - 15 -
V
GS(th)
Temperature coefficient V
GS(th)
/T
J
I
D
= 250 μA Ch-1 - 4.9 -
I
D
= 250 μA Ch-2 - 4.6 -
Gate threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA Ch-1 1.1 - 2.2
V
V
DS
= V
GS
, I
D
= 250 μA Ch-2 1.1 - 2.2
Gate source leakage I
GSS
V
DS
= 0 V, V
GS
= +16 V, -12 V
Ch-1 - - 100
nA
Ch-2 - - 100
Zero gate voltage drain current I
DSS
V
DS
= 25 V, V
GS
= 0 V Ch-1 - - 1
μA
V
DS
= 25 V, V
GS
= 0 V Ch-2 - - 1
V
DS
= 25 V, V
GS
= 0 V, T
J
= 55 °C Ch-1 - - 10
V
DS
= 25 V, V
GS
= 0 V, T
J
= 55 °C Ch-2 - - 10
On-state drain current
b
I
D(on)
V
DS
5 V, V
GS
= 10 V Ch-1 20 - -
A
V
DS
5 V, V
GS
= 10 V Ch-2 20 - -
Drain-source on-state resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 5 A Ch-1 - 0.00380 0.00480
V
GS
= 10 V, I
D
= 8 A Ch-2 - 0.00173 0.00220
V
GS
= 4.5 V, I
D
= 3 A Ch-1 - 0.00640 0.00790
V
GS
= 4.5 V, I
D
= 5 A Ch-2 - 0.00265 0.00335
Forward transconductance
b
g
fs
V
GS
= 10 V, I
D
= 5 A Ch-1 - 40 -
S
V
GS
= 10 V, I
D
= 8 A Ch-2 - 55 -
Dynamic
a
Input capacitance C
iss
Channel-1
V
DS
= 10 V, V
GS
= 10 V, f = 1 MHz
Channel-2
V
DS
= 10 V, V
GS
= 10 V, f = 1 MHz
Ch-1 - 925 -
pF
Ch-2 - 2150 -
Output capacitance C
oss
Ch-1 - 310 -
Ch-2 - 800 -
Reverse transfer capacitance C
rss
Ch-1 - 52 -
Ch-2 - 100 -
C
rss
/C
iss
ratio
Ch-1 - 0.056 0.115
Ch-2 - 0.047 0.095
Total gate charge Q
g
V
DS
= 10 V, V
GS
= 10 V, I
D
= 5 A Ch-1 - 12.5 19
nC
V
DS
= 10 V, V
GS
= 10 V, I
D
= 8 A Ch-2 - 27 41
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 5 A Ch-1 - 5.9 8.9
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 8 A Ch-2 - 12.5 19
Gate-source charge Q
gs
Channel-1
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 5 A
Channel-2
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 8 A
Ch-1 - 2.5 -
Ch-2 - 5.4 -
Gate-drain charge Q
gd
Ch-1 - 1.2 -
Ch-2 - 2.1 -
Output charge Q
oss
V
DS
= 10 V, V
GS
= 0 V
Ch-1 - 5 -
Ch-2 - 13 -
Gate resistance R
g
f = 1 MHz
Ch-1 0.18 0.92 1.9
Ch-2 0.12 0.6 1.2
SiZ926DT
www.vishay.com
Vishay Siliconix
S17-0334-Rev. B, 06-Mar-17
3
Document Number: 68127
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Dynamic
a
Turn-on delay time t
d(on)
Channel-1
V
DD
= 10 V, R
L
= 2
I
D
5 A, V
GEN
= 10 V, R
g
= 1
Channel-2
V
DD
= 10 V, R
L
= 2
I
D
5 A, V
GEN
= 10 V, R
g
= 1
Ch-1 - 8 20
ns
Ch-2 - 10 20
Rise time t
r
Ch-1 - 20 40
Ch-2 - 20 40
Turn-off delay time t
d(off)
Ch-1 - 12 25
Ch-2 - 17 35
Fall time t
f
Ch-1 - 8 20
Ch-2 - 8 20
Turn-on delay time t
d(on)
Channel-1
V
DD
= 10 V, R
L
= 2
I
D
5 A, V
GEN
= 4.5 V, R
g
= 1
Channel-2
V
DD
= 10 V, R
L
= 2
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
Ch-1 - 12 25
Ch-2 - 16 35
Rise time t
r
Ch-1 - 47 100
Ch-2 - 40 80
Turn-off delay time t
d(off)
Ch-1 - 6 15
Ch-2 - 13 30
Fall time t
f
Ch-1 - 12 25
Ch-2 - 12 25
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I
S
T
C
= 25 °C
Ch-1 - - 16.8
A
Ch-2 - - 33.6
Pulse diode forward current (t = 100 μs) I
SM
Ch-1 - - 100
Ch-2 - - 170
Body diode voltage V
SD
I
S
= 5 A, V
GS
= 0 V Ch-1 - 0.81 1.2
V
I
S
= 8 A, V
GS
= 0 V Ch-2 - 0.77 1.2
Body diode reverse recovery time t
rr
Channel-1
I
F
= 5 A, dI/dt = 100 A/μs, T
J
= 25 °C
Channel-2
I
F
= 8 A, dI/dt = 100 A/μs, T
J
= 25 °C
Ch-1 - 25 50
ns
Ch-2 - 20 40
Body diode reverse recovery charge Q
rr
Ch-1 - 15 30
nC
Ch-2 - 15 30
Reverse recovery fall time t
a
Ch-1 - 13.5 -
ns
Ch-2 - 13 -
Reverse recovery rise time t
b
Ch-1 - 11.5 -
Ch-2 - 7 -
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
P1-P3P4-P6P7-P9P10-P12P13-P14

SIZ926DT-T1-GE3

Mfr. #:
Buy SIZ926DT-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 25V Vds 16V Vgs PowerPAIR 6 x 5
Lifecycle:
New from this manufacturer.
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