SiZ926DT
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Vishay Siliconix
S17-0334-Rev. B, 06-Mar-17
5
Document Number: 68127
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CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
10
100
1000
10000
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
2nd line
T
J
= 150 °C
T
J
= 25 °C
10
100
1000
10000
1.2
1.4
1.6
1.8
2.0
2.2
-50-25 0 255075100125150
Axis Title
1st line
2nd line
2nd line
V
GS(th)
(V)
T
J
- Temperature (°C)
2nd line
I
D
= 250 µA
10
100
1000
10000
0
0.005
0.010
0.015
0.020
0246810
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
2nd line
T
J
= 25 °C
T
J
= 150 °C
I
D
= 5 A
0
10
20
30
40
0.001
Power (W)
Time (s)
0.01 0.1 1 10 100 1000
10
100
1000
10000
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
(1)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
R
DS(on)
Limited
(1)
T
A
= 25 °C
Single pulse
100 ms
10 ms
1 ms
100 µs
1 s
10 s
DC
I
DM
Limited
BVDSSLimited
I
D(on)
Limited
