CY7C1069AV33-12ZXCT

2M x 8 Static RAM
CY7C1069AV33
Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600
Document #: 38-05255 Rev. *F Revised August 3, 2006
Features
•High speed
—t
AA
= 10, 12 ns
Low active power
990 mW (max.)
Operating voltages of 3.3 ± 0.3V
2.0V data retention
Automatic power-down when deselected
TTL-compatible inputs and outputs
Easy memory expansion with CE
1
and CE
2
features
Available in Pb-free and non Pb-free 54-pin TSOP II ,
non Pb-free 60-ball fine-pitch ball grid array (FBGA)
package
Functional Description
The CY7C1069AV33 is a high-performance CMOS Static
RAM organized as 2,097,152 words by 8 bits. Writing to the
device is accomplished by enabling the chip (by taking CE
1
LOW and CE
2
HIGH) and Write Enable (WE) inputs LOW.
Reading from the device is accomplished by enabling the chip
(CE
1
LOW and CE
2
HIGH) as well as forcing the Output
Enable (OE
) LOW while forcing the Write Enable (WE) HIGH.
See the truth table at the back of this data sheet for a complete
description of Read and Write modes.
The input/output pins (I/O
0
through I/O
7
) are placed in a
high-impedance state when the device is deselected (CE
1
HIGH or CE
2
LOW), the outputs are disabled (OE HIGH), or
during a Write operation (CE
1
LOW, CE
2
HIGH, and WE
LOW).
The CY7C1069AV33 is available in a 54-pin TSOP II package
with center power and ground (revolutionary) pinout, and a
60-ball fine-pitch ball grid array (FBGA) package.
Logic Block Diagram
Top View
TSOP II
WE
1
2
3
4
5
6
7
8
9
10
11
14
31
32
36
35
34
33
37
40
39
38
12
13
41
43
42
16
15
29
30
A
5
A
6
A
7
A
8
A
0
A
1
OE
V
SS
A
17
I/O
7
A
2
CE
1
I/O
0
I/O
1
A
3
A
4
18
17
20
19
27
28
25
26
22
21
23
24
I/O
2
I/O
3
A
16
A
15
V
CC
I/O
6
NC
I/O
5
I/O
4
A
14
A
13
A
12
A
11
A
9
A
10
CE
2
44
46
45
47
50
49
48
51
53
52
54
V
SS
V
CC
A
19
A
18
V
CC
V
CC
V
SS
DNU
V
SS
NC
V
CC
V
SS
NC
NC
NC
NC
NC
NC
NC
NC
A
20
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
COLUMN
DECODER
ROW DECODER
SENSE AMPS
Data in Drivers
POWER
DOWN
WE
OE
I/O
0
I/O
1
I/O
2
I/O
3
2048K x 8
ARRAY
I/O
7
I/O
6
I/O
5
I/O
4
A
0
A
14
A
13
A
17
A
19
A
15
A
16
A
9
A
18
CE
1
CE
2
A
10
A
11
A
12
A
20
Pin Configurations
[1, 2]
[+] Feedback
CY7C1069AV33
Document #: 38-05255 Rev. *F Page 2 of 9
Notes:
1. NC pins are not connected on the die.
2. DNU pins have to be left floating or tied to VSS to ensure proper application.
Selection Guide
–10 –12 Unit
Maximum Access Time 10 12 ns
Maximum Operating Current 275 260 mA
Maximum CMOS Standby Current 50 50 mA
Pin Configurations
[1, 2]
(continued)
60-ball FBGA
WE
V
CC
A
11
A
10
A
6
A
0
A
3
CE
1
I/O
0
A
4
A
5
I/O
1
I/O
2
I/O
3
NC
V
SS
A
9
A
8
OE
V
SS
A
7
NC
CE2
A
17
A
2
A
1
V
CC
I/O
4
I/O
5
I/O
6
I/O
7
NC
A
15
A
14
A
13
A
12
DNU
3
2
6
5
4
1
D
E
B
A
C
F
G
H
(Top View)
A
16
A
19
A
20
NC
NC
NC
NC
A
18
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
[+] Feedback
CY7C1069AV33
Document #: 38-05255 Rev. *F Page 3 of 9
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage on V
CC
to Relative GND
[3]
.... –0.5V to +4.6V
DC Voltage Applied to Outputs
in High-Z State
[3]
....................................–0.5V to V
CC
+ 0.5V
DC Input Voltage
[3]
................................–0.5V to V
CC
+ 0.5V
Current into Outputs (LOW).........................................20 mA
Operating Range
Range
Ambient
Temperature V
CC
Commercial 0°C to +70°C 3.3V ± 0.3V
Industrial –40°C to +85°C
DC Electrical Characteristics Over the Operating Range
Parameter Description Test Conditions
–10 –12
UnitMin. Max. Min. Max.
V
OH
Output HIGH Voltage V
CC
= Min., I
OH
= –4.0 mA 2.4 2.4 V
V
OL
Output LOW Voltage V
CC
= Min., I
OL
= 8.0 mA 0.4 0.4 V
V
IH
Input HIGH Voltage 2.0 V
CC
+ 0.3 2.0 V
CC
+ 0.3 V
V
IL
Input LOW Voltage
[3]
–0.3 0.8 –0.3 0.8 V
I
IX
Input Leakage Current GND < V
I
< V
CC
–1 +1 –1 +1 µA
I
OZ
Output Leakage Current GND < V
OUT
< V
CC
, Output Disabled –1 +1 –1 +1 µA
I
CC
V
CC
Operating
Supply Current
V
CC
= Max.,
f = f
MAX
= 1/t
RC
275 260 mA
I
SB1
Automatic CE
Power-down Current
TTL Inputs
CE
2
< V
IL
,
Max. V
CC
, CE
1
> V
IH
V
IN
> V
IH
or V
IN
< V
IL
, f = f
MAX
70 70 mA
I
SB2
Automatic CE
Power-down Current
CMOS Inputs
CE
2
< 0.3V, Max. V
CC
,
CE
1
> V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V,
or V
IN
< 0.3V, f = 0
50 50 mA
Capacitance
[4]
Parameter Description Test Conditions TSOP II FBGA Unit
C
IN
Input Capacitance T
A
= 25°C, f = 1 MHz, V
CC
= 3.3V 6 8 pF
C
OUT
I/O Capacitance 8 10 pF
AC Test Loads and Waveforms
[5]
Notes:
3. V
IL
(min.) = –2.0V for pulse durations of less than 20 ns.
4. Tested initially and after any design or process changes that may affect these parameters.
5. Valid SRAM operation does not occur until the power supplies have reached the minimum operating V
DD
(3.0V). As soon as 1ms (T
power
) after reaching the
minimum operating V
DD
, normal SRAM operation can begin including reduction in V
DD
to the data retention (V
CCDR
, 2.0V) voltage.
90%
10%
3.3V
GND
90%
10%
All input pulses
3.3V
OUTPUT
5 pF*
*Including
jig and
scope
(a)
(b)
R1 317
R2
351
Rise time > 1V/ns
Fall time: > 1V/ns
(c)
OUTPUT
50
Z
0
= 50
V
TH
= 1.5V
30 pF*
*Capacitive Load consists of all
components of the test environment
[+] Feedback

CY7C1069AV33-12ZXCT

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
IC SRAM 16M PARALLEL 54TSOP
Lifecycle:
New from this manufacturer.
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