BYV32EB-200,118

IMPORTANT NOTICE

10 December 2015

1. Global joint venture starts operations as WeEn Semiconductors

Dear customer,

As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset

Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which

will be used in future Bipolar Power documents together with new contact details.

In this document where the previous NXP references remain, please use the new links as shown

below.

If you have any questions related to this document, please contact our nearest sales office via e-

mail or phone (details via salesaddresses@ween-semi.com).

Thank you for your cooperation and understanding,

WeEn Semiconductors

BYV32EB-200

Dual ultrafast power diode

13 October 2016 Product data sheet

1. General description

Dual ultrafast power diode in a SOT404 (D2PAK) surface-mountable plastic package.

2. Features and benefits

• High reverse voltage surge capability

• High thermal cycling performance

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V

repetitive peak reverse

voltage

I

average output current δ = 0.5 ; T

Static characteristics

= 8 A; T

= 150 °C; Fig. 4 - 0.72 0.85 VV

forward voltage

= 20 A; T

= 25 °C - 1 1.15 V

Dynamic characteristics

t

reverse recovery time I

= 1 A; V

= 30 V; dI

/dt = 100 A/µs;

= 25 °C; ramp recovery; Fig. 5

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 A1 anode 1

2 K cathode[1]

3 A2 anode 2

mb K mounting base; cathode

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

BYV32EB-200 D2PAK plastic single-ended surface-mounted package (D2PAK); 3

SOT404