WeEn Semiconductors
BYV32EB-200
Dual ultrafast power diode
BYV32EB-200 All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 13 October 2016 3 / 11
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
repetitive peak reverse
voltage
- 200 V
V
RWM
crest working reverse
voltage
- 200 V
V
R
reverse voltage DC - 200 V
I
O(AV)
average output current δ = 0.5 ; T
mb
≤ 115 °C; square-wave
pulse; both diodes conducting; Fig. 1;
Fig. 2
- 20 A
I
FRM
repetitive peak forward
current
δ = 0.5 ; t
p
= 25 µs; T
mb
≤ 115 °C; per
diode
- 20 A
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse; per diode
- 137 AI
FSM
non-repetitive peak
forward current
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse; per diode
- 125 A
I
RRM
repetitive peak reverse
current
δ = 0.001 ; t
p
= 2 µs - 0.2 A
I
RSM
non-repetitive peak
reverse current
t
p
= 100 µs - 0.2 A
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 150 °C
V
ESD
electrostatic discharge
voltage
HBM; C = 250 pF; R = 1.5 kΩ; all pins - 8 kV
0 1284
003aac978
4
8
12
0
1.9
a = 1.57
2.2
2.8
4.0
I
F(AV)
(A)
P
tot
(W)
Fig. 1. Forward power dissipation as a function
of average forward current; sinusoidal waveform;
maximum values
0 15105
003aac979
5
10
15
0
0.5
0.1
I
F(AV)
(A)
P
tot
(W)
δ = 1
Fig. 2. Forward power dissipation as a function of
average forward current; square waveform; maximum
values
