RJK0353DPA Preliminary
R07DS0915EJ0500 Rev.5.00 Page 2 of 6
Mar 19, 2013
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR)DSS
30 — — V I
D
= 10 mA, V
GS
= 0
Gate to source leak current I
GSS
— — 0.1 A V
GS
= 20 V, V
DS
= 0
Zero gate voltage drain current I
DSS
— — 1 A V
DS
= 30 V, V
GS
= 0
Gate to source cutoff voltage V
GS(off)
1.2 — 2.5 V V
DS
= 10 V, I
D
= 1 mA
R
DS(on)
— 4.0 5.2 m I
D
= 17.5 A, V
GS
= 10 V
Note4
Static drain to source on state
resistance
R
DS(on)
— 5.4 7.6 m I
D
= 17.5 A, V
GS
= 4.5 V
Note4
Forward transfer admittance |y
fs
| — 70 — S I
D
= 17.5 A, V
DS
= 10 V
Note4
Input capacitance Ciss — 2180 — pF
Output capacitance Coss — 420 — pF
Reverse transfer capacitance Crss — 135 — pF
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
Gate Resistance Rg — 2.0 —
Total gate charge Qg — 14 — nC
Gate to source charge Qgs — 6.0 — nC
Gate to drain charge Qgd — 3.0 — nC
V
DD
= 10 V, V
GS
= 4.5 V,
I
D
= 35 A
Turn-on delay time t
d(on)
— 8.5 — ns
Rise time t
r
— 4.8 — ns
Turn-off delay time t
d(off)
— 47.5 — ns
Fall time t
f
— 6.0 — ns
V
GS
= 10 V, I
D
= 17.5 A,
V
DD
10 V, R
L
= 0.57 ,
Rg = 4.7
Body–drain diode forward voltage V
DF
— 0.83 1.08 V I
F
= 35 A, V
GS
= 0
Note4
Body–drain diode reverse recovery
time
t
rr
— 25 — ns
I
F
= 35 A, V
GS
= 0
di
F
/ dt = 100 A/ s
Notes: 4. Pulse test
