RJK0353DPA Preliminary
R07DS0915EJ0500 Rev.5.00 Page 4 of 6
Mar 19, 2013
Case Temperature Tc (
°
C)
Static Drain to Source On State Resistance
vs. Temperature
20
16
12
8
4
–25 0 25 50 75 100 125 150
0
I
D
= 2 A, 5 A, 10 A
V
GS
= 4.5 V
10 V
Pulse Test
2 A, 5 A, 10 A
Static Drain to Source On State Resistance
R
DS (on)
(mΩ)
Channel Temperature Tch (°C)
Repetitive Avalanche Energy E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
50
40
30
20
10
25 50 75 100 125 150
0
I
AP
= 16 A
V
DD
= 15 V
duty < 0.1 %
Rg ≥ 50 Ω
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
50
40
30
20
10
0
0.4 0.8 1.2 1.6 2.0
Pulse Test
5 V
V
GS
= 0, –5 V
10 V
Capacitance C (pF)
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
010 3020
10000
3000
1000
300
100
30
10
V
GS
= 0
f = 1 MHz
Crss
Coss
Ciss
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Dynamic Input Characteristics
50
40
30
20
10
0
20
16
12
8
4
20 40 60 80 100
00
I
D
= 35 A
V
GS
V
DS
V
DD
= 25 V
10 V
V
DD
= 25 V
10 V
