Nexperia
BAV70SRA
Quad high-speed switching diodes
BAV70SRA All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 26 June 2017 3 / 12
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
V
R
reverse voltage T
j
= 25 °C - 100 V
single diode loaded; T
amb
= 25 °C [1] - 355 mAI
F
forward current
double diodes loaded; T
amb
= 25 °C [1] - 210 mA
t
p
= 100 µs; T
j(init)
= 25 °C; square wave - 4 A
t
p
= 1 ms; T
j(init)
= 25 °C; square wave - 1.5 A
I
FSM
non-repetitive peak
forward current
t
p
= 1 s; T
j(init)
= 25 °C; square wave - 0.5 A
I
FRM
repetitive peak forward
current
t
p
≤ 0.5 ms; δ ≤ 0.25 - 1 A
Per device; one diode loaded
[1] - 410 mWP
tot
total power dissipation T
amb
≤ 25 °C
[2] - 610 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated mounting pad for cathode 1cm
2
.
T
amb
(°C)
17512525 150100500 75
aaa-025705
0.2
0.1
0.3
0.4
I
F
(A)
0
(1)
(2)
(1) single diode loaded
(2) double diode loaded
Fig. 1. Forward current as a function of ambient temperature; derating curve
