High Isolation, Silicon SPDT,
Nonreflective Switch, 0.1 GHz to 6.0 GHz
Data Sheet
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FEATURES
Nonreflective, 50 Ω design
High isolation: 60 dB typical
Low insertion loss: 0.8 dB typical
High power handling
34 dBm through path
29 dBm terminated path
High linearity
0.1 dB compression (P0.1dB): 35 dBm typical
Input third-order intercept (IP3): 60 dBm typical
ESD ratings
4 kV human body model (HBM), Class 3A
1.25 kV charged device model (CDM)
Single positive supply
3.3 V to 5 V
1.8 V-compatible control
All off state control
16-lead, 4 mm × 4 mm LFCSP (16 mm
2
)
Pin compatible with the HMC849ALP4CE
APPLICATIONS
Cellular/4G infrastructure
Wireless infrastructure
Automotive telematics
Mobile radios
Test equipment
FUNCTIONAL BLOCK DIAGRAM
13554-001
12
11
10
1
3
4
9
2
6
5
7
8
16
15
14
13
V
DD
V
CTL
RFC
NC
RF2
NC
NC
NC
NC
GND
GND
RF1
EN
NC
NC
NC
HMC8038
50Ω
50Ω
PACKAGE
BASE
Figure 1.
GENERAL DESCRIPTION
The HMC8038 is a high isolation, nonreflective, 0.1 GHz to
6.0 GHz, silicon, single-pole, double-throw (SPDT) switch in a
leadless, surface-mount package. The switch is ideal for cellular
infrastructure applications, yielding up to 62 dB of isolation up to
4.0 GHz, a low 0.8 dB of insertion loss up to 4.0 GHz, and 60 dBm
of input third-order intercept. Power handling is excellent up to
6.0 GHz, and it offers an input power for an 0.1 dB compression
point (P0.1dB) of 35 dBm (V
DD
= 5 V). On-chip circuitry operates
a single, positive supply voltage from 3.3 V to 5 V, as well as a
single, positive voltage control from 0 V to 1.8 V/3.3 V/5.0 V at
very low dc currents. An enable input (EN) set to logic high
places the switch in an all off state, in which RFC is reflective.
The HMC8038 has ESD protection on all device pins, including
the RF interface, and can stand 4 kV HMB and 1.25 kV CDM.
The HMC8038 offers very fast switching and RF settling times of
150 ns and 170 ns, respectively. The device comes in a RoHS-
compliant, compact 4 mm × 4 mm LFCSP.
