IRFP460PBF Datasheet IRFP460PBF | P1-P3

Document Number: 91237 www.vishay.com

S-81360-Rev. A, 28-Jul-08 1

Power MOSFET

IRFP460, SiHFP460

Vishay Siliconix

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Isolated Central Mounting Hole

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-247 package is preferred for commercial-industrial

applications where higher power levels preclude the use of

TO-220 devices. The TO-247 is similar but superior to the

earlier TO-218 package because its isolated mounting hole.

It also provides greater creepage distances between pins to

meet the requirements of most safety specifications.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

DD

= 50 V, starting T

J

= 25 °C, L = 4.3 mH, R

G

= 25 Ω, I

AS

= 20 A (see fig. 12).

c. I

SD

≤ 20 A, dI/dt ≤ 160 A/µs, V

DD

≤ V

DS

, T

J

≤ 150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

V

DS

(V) 500

R

DS(on)

(Ω)V

GS

= 10 V 0.27

Q

g

(Max.) (nC) 210

Q

gs

(nC) 29

Q

gd

(nC) 110

Configuration Single

N-Channel MOSFET

G

D

S

TO-247

G

D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package TO-247

Lead (Pb)-free

IRFP460PbF

SiHFP460-E3

SnPb

IRFP460

SiHFP460

ABSOLUTE MAXIMUM RATINGS T

C

= 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

DS

500

V

Gate-Source Voltage V

GS

± 20

Continuous Drain Current V

GS

at 10 V

T

C

= 25 °C

I

D

20

AT

C

= 100 °C 13

Pulsed Drain Current

a

I

DM

80

Linear Derating Factor 2.2 W/°C

Single Pulse Avalanche Energy

b

E

AS

960 mJ

Repetitive Avalanche Current

a

I

AR

20 A

Repetitive Avalanche Energy

a

E

AR

28 mJ

Maximum Power Dissipation T

C

= 25 °C P

D

280 W

Peak Diode Recovery dV/dt

c

dV/dt 3.5 V/ns

Operating Junction and Storage Temperature Range T

J

, T

stg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature) for 10 s 300

d

Mounting Torque 6-32 or M3 screw

10 lbf · in

1.1 N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply

www.vishay.com Document Number: 91237

2 S-81360-Rev. A, 28-Jul-08

IRFP460, SiHFP460

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

thJA

-40

°C/WCase-to-Sink, Flat, Greased Surface R

thCS

0.24 -

Maximum Junction-to-Case (Drain) R

thJC

-0.45

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= 250 µA 500 - -

V

DS

Temperature Coefficient ΔV

DS

/T

J

Reference to 25 °C, I

D

= 1 mA - 0.63 -

V/°C

Gate-Source Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA 2.0 - 4.0 V

Gate-Source Leakage I

GSS

V

GS

= ± 20 V - - ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

DS

= 500 V, V

GS

= 0 V - - 25

µA

V

DS

= 400 V, V

GS

= 0 V, T

J

= 125 °C - - 250

Drain-Source On-State Resistance R

DS(on)

V

GS

= 10 V I

D

= 12 A

b

--0.27Ω

Forward Transconductance g

fs

V

DS

= 50 V, I

D

= 12 A

b

13 - - S

Dynamic

Input Capacitance C

iss

V

GS

= 0 V,

V

DS

= 25 V,

f = 1.0 MHz, see fig. 5

- 4200 -

pFOutput Capacitance C

oss

- 870 -

Reverse Transfer Capacitance C

rss

- 350 -

Total Gate Charge Q

g

V

GS

= 10 V

I

D

= 20 A, V

DS

= 400 V

see fig. 6 and 13

b

- - 210

nC Gate-Source Charge Q

gs

--29

Gate-Drain Charge Q

gd

- - 110

Turn-On Delay Time t

d(on)

V

DD

= 250 V, I

D

= 20 A ,

R

G

= 4.3 Ω, R

D

= 13 Ω, see fig. 10

b

-18-

ns

Rise Time t

r

-59-

Turn-Off Delay Time t

d(off)

- 110 -

Fall Time t

f

-58-

Internal Drain Inductance L

D

Between lead,

6 mm (0.25") from

package and center of

die contact

-5.0-

nH

Internal Source Inductance L

S

-13-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

S

MOSFET symbol

showing the

integral reverse

p - n junction diode

--20

A

Pulsed Diode Forward Current

a

I

SM

--80

Body Diode Voltage V

SD

T

J

= 25 °C, I

S

= 20 A, V

GS

= 0 V

b

--1.8V

Body Diode Reverse Recovery Time t

rr

T

J

= 25 °C, I

F

= 20A, dI/dt = 100 A/µs

b

- 570 860 ns

Body Diode Reverse Recovery Charge Q

rr

-5.78.6µC

Forward Turn-On Time t

on

Intrinsic turn-on time is negligible (turn-on is dominated by L

S

and L

D

)

D

S

G

S

D

G

Document Number: 91237 www.vishay.com

S-81360-Rev. A, 28-Jul-08 3

IRFP460, SiHFP460

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics, T

C

= 25 °C

Fig. 2 - Typical Output Characteristics, T

C

= 150 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

V

DS

, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

20 µs Pulse Width

T

C

= 25 °C

4.5 V

10

1

10

0

10

0

10

1

Bottom

To p

V

GS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

91237_01

4.5 V

Bottom

To p

V

GS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width

T

C

= 150 °C

10

1

10

0

10

0

10

1

I

D

, Drain Current (A)

91237_02

V

DS

,

Drain-to-Source Voltage (V)

91237_03

25 °C

150 °C

20 µs Pulse Width

V

DS

= 50 V

10

1

10

0

I

D

, Drain Current (A)

V

GS

,

Gate-to-Source Voltage (V)

5678 910

4

91237_04

I

D

= 20 A

V

GS

= 10 V

3.5

0.0

0.5

1.0

1.5

2.0

2.5

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

T

J

,

Junction Temperature (°C)

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

3.0

IRFP460PBF

IRFP460PBF

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