OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IRFP460PBF

P1-P3P4-P6P7-P9
www.vishay.com Document Number: 91237
4 S-81360-Rev. A, 28-Jul-08
IRFP460, SiHFP460
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
91237_05
10 000
8000
6000
4000
0
2000
10
0
10
1
Capacitance (pF)
V
DS
,
Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
91237_06
I
D
= 20 A
V
DS
= 250 V
For test circuit
see figure 13
V
DS
= 100 V
V
DS
= 400 V
Q
G
, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
0
40
200
160120
80
91237_07
10
2
V
SD
, Source-to-Drain Voltage (V)
I
SD
, Reverse Drain Current (A)
0.6 1.21.00.8
1.6
1.4
25 °C
150 °C
V
GS
= 0 V
10
1
1.8 2.0
91237_08
10 µs
100 µs
1 ms
10 ms
Operation in this area limited
by R
DS(on)
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
I
D
, Drain Current (A)
10
3
2
5
2
5
2
5
V
DS
, Drain-to-Source Voltage (V)
1
10
10
2
10
3
25 25 25
1
10
10
2
Document Number: 91237 www.vishay.com
S-81360-Rev. A, 28-Jul-08 5
IRFP460, SiHFP460
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11a - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
0
8
12
16
20
25 1501251007550
4
91237_09
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10 V
+
-
V
DS
V
DD
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
91237_11
0 - 0.5
0.2
0.1
0.05
0.01
Single Pulse
(Thermal Response)
P
DM
t
1
t
2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
0.02
Thermal Response (Z
thJC
)
1
0.1
10
-3
t
1
, Rectangular Pulse Duration (S)
10
-5
10
-4
10
-3
10
-2
0.1 1 10
10
-2
R
G
I
AS
0.01 Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
A
10 V
Vary t
p
to obtain
required I
AS
I
AS
V
DS
V
DD
V
DS
t
p
www.vishay.com Document Number: 91237
6 S-81360-Rev. A, 28-Jul-08
IRFP460, SiHFP460
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
91237_12c
Bottom
To p
I
D
8.9 A
13 A
20 A
V
DD
= 50 V
2400
0
400
800
1200
1600
2000
25 150
125
10075
50
Starting T
J
, Junction Temperature (°C)
E
AS
, Single Pulse Energy (mJ)
Q
GS
Q
GD
Q
G
V
G
Charge
10 V
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
P1-P3P4-P6P7-P9

IRFP460PBF

Mfr. #:
Buy IRFP460PBF
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-CH 500V HEXFET MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet