AO5401E
Symbol Min Typ Max Units
BV
DSS
-20 V
1
T
J
=55°C 5
±1 µA
±10 µA
V
GS(th)
-0.4 -0.5 -0.9 V
I
D(ON)
-1 A
0.53 0.8
T
J
=125°C 0.75 0.95
0.72 1 Ω
0.95 1.3 Ω
g
FS
0.9 S
V
SD
-0.66 -1 V
I
S
-0.5 A
C
iss
72 100 pF
C
oss
17 pF
C
rss
9 pF
t
D(on)
60.5 ns
t
r
150 ns
t
D(off)
612 ns
t
f
436 ns
t
rr
27 35
ns
Q
rr
8.3 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-4.5V, V
DS
=-10V, R
L
=50Ω,
R
GEN
=3Ω
Turn-Off Fall Time
V
GS
=0V, V
DS
=-10V, f=1MHz
SWITCHING PARAMETERS
Ω
V
GS
=-2.5V, I
D
=-0.5A
I
S
=-0.1A,V
GS
=0V
V
DS
=-5V, I
D
=-0.5A
V
GS
=-1.8V, I
D
=-0.3A
I
DSS
µΑ
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250µA
V
DS
=-20V, V
GS
=0V
V
DS
=10V, V
GS
=±8V
Zero Gate Voltage Drain Current
V
DS
=10V, V
GS
=±4.5V
I
GSS
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=-0.5A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250µA, V
GS
=0V
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-0.5A
Reverse Transfer Capacitance
I
F
=-0.5A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
Rev 4 : Oct 2008
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
