AO5401E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(Volts)
0
20
40
60
80
100
0 5 10 15 20
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
0
2
4
6
8
10
12
14
0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
θ
θ
θ
θ
JA
Normalized Transient
Thermal Resistance
C
oss
0.01
0.10
1.00
10.00
0.1 1 10 100
-V
DS
(Volts)
-I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
R
DS(ON)
T
=150°C, T
=25°C
V
DS
=-10V
I
D
=-0.5A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=450°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
A
=25°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
