AOT480L

AOT480L/AOB480L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0
2
4
6
8
10
0 20 40 60 80 100 120
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
0 20 40 60 80
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
0
1000
2000
3000
4000
5000
1E-05 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Power (W)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
θ
θ
θ
θ
JC
Normalized Transient
Thermal Resistance
C
oss
C
rss
V
DS
=20V
I
D
=20A
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175°C
T
C
=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100 1000
V
DS
(Volts)
I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=175°C
T
C
=25°C
100
µ
s
R
θJC
=0.45°C/W
Rev1: April 2010 www.aosmd.com Page 4 of 7
AOT480L/AOB480L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0.001
0.01
0.1
1
10
0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Z
θ
θ
θ
θ
JA
Normalized Transient
Thermal Resistance
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
10.0
100.0
1000.0
1 10 100 1000
Time in avalanche, t
A
(µ
µµ
µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
I
AR
(A) Peak Avalanche Current
0
40
80
120
160
200
240
280
320
360
0 25 50 75 100 125 150 175
T
CASE
C)
Figure 13: Power De-rating (Note F)
Power Dissipation (W)
0
40
80
120
160
200
0 25 50 75 100 125 150 175
T
CASE
C)
Figure 14: Current De-rating (Note F)
Current rating I
D
(A)
T
A
=25°C
1
10
100
1000
0.0001 0.01 1 100 10000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Power (W)
T
A
=25°C
T
A
=150°C
T
A
=100°C
T
A
=125°C
R
θJA
=65°C/W
Rev1: April 2010 www.aosmd.com Page 5 of 7
AOT480L/AOB480L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
120
160
200
240
0 5 10 15 20 25 30
I
S
(A)
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
Q
rr
(nC)
2
10
18
26
34
42
50
I
rm
(A)
di/dt=800A/µs
125ºC
125ºC
25ºC
25ºC
Q
rr
I
rm
0
40
80
120
160
200
240
0 200 400 600 800 1000
di/dt (A/µ
µµ
µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Q
rr
(nC)
0
10
20
30
40
I
rm
(A)
125ºC
125ºC
25ºC
25ºC
I
s
=20A
Q
rr
I
rm
4
8
12
16
20
24
28
32
36
0 5 10 15 20 25 30
I
S
(A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
t
rr
(ns)
0
0.5
1
1.5
S
di/dt=800A/µs
125ºC
125ºC
25ºC
25ºC
t
rr
S
0
10
20
30
40
50
0 200 400 600 800 1000
di/dt (A/µ
µµ
µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
t
rr
(ns)
0
0.5
1
1.5
2
S
125ºC
25ºC
25ºC
125º
I
s
=20A
t
rr
S
Rev1: April 2010 www.aosmd.com Page 6 of 7

AOT480L

Mfr. #:
Manufacturer:
Description:
MOSFET N-CH 80V 15A TO220
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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