MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G
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MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100 V
Average Rectified Forward Current
(T
L
= 150°C)
I
O
2.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
130
A
Storage Temperature Range T
stg
−65 to +175 °C
Operating Junction Temperature (Note 1) T
J
−65 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Note 2)
MBRA2H100T3G, NRVBA2H100T3G
MBRS2H100T3G, NBRS2H100T3G
Y
JCL
14
12
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
MBRA2H100T3G, NRVBA2H100T3G
MBRS2H100T3G, NBRS2H100T3G
R
q
JA
75
71
°C/W
Thermal Resistance, Junction−to−Ambient (Note 3)
MBRA2H100T3G, NRVBA2H100T3G
MBRS2H100T3G, NBRS2H100T3G
R
q
JA
275
230
°C/W
2. Mounted with 700 mm square copper pad size (Approximately 1 inch square) 1 oz FR4 Board.
3. Mounted with minimum recommended pad size 1 oz FR4 Board.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol
Value
Unit
T
J
= 25°C T
J
= 125°C
Maximum Instantaneous Forward Voltage (Note 4)
(i
F
= 2.0 A)
v
F
0.79 0.65
V
Maximum Instantaneous Reverse Current (Note 4)
(V
R
= 100 V)
I
R
0.008 1.5
mA
4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
