BUK9832-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 1 June 2010 7 of 13
NXP Semiconductors
BUK9832-55A
N-channel TrenchMOS logic level FET
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 10. Gate-source voltage as a function of turn-on
gate charge; typical values
Fig 11. Gate-source threshold voltage as a function of
junction temperature
Fig 12. Drain-source on-state resistance as a function
of drain current; typical values
03nc39
0
5
10
15
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V
GS
(V)
I
D
(A)
T
j
= 150 °C
T
j
= 25 °C
03nc37
0
1
2
3
4
5
0102030
Q
G
(nC)
V
GS
(V)
V
DD
= 44 V
V
DD
= 14 V
03aa33
0
0.5
1
1.5
2
2.5
-60 0 60 120 180
T
j
(
°
C)
V
GS(th)
(V)
max
typ
min
03nc42
0
10
20
30
40
50
60
70
80
020406080
I
D
(A)
R
DSon
(mΩ)
V
GS
(V) =
3 3.2 3.4
3.6
3.8
4
5
