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NTNUS3171PZT5G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 1
1 Publication Order Number:
NTNUS3171PZ/D
NTNUS3171PZ
Small Signal MOSFET
−20 V, −200 mA, Single P−Channel,
1.0 x 0.6 mm SOT−1123 Package
Features
• Single P−Channel MOSFET
• Offers a Low R
DS(on)
Solution in the Ultra Small 1.0 x 0.6 mm
Package
• 1.5 V Gate Voltage Rating
• Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
Thin Environments such as Portable Electronics.
• This is a Pb−Free Device
Applications
• High Side Switch
• High Speed Interfacing
• Optimized for Power Management in Ultra Portable Equipment
MAXIMUM RATINGS (T
J
= 25°C unless otherwise specified)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
−20 V
Gate−to−Source Voltage V
GS
±8 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
−150
mA
T
A
= 85°C −110
t v 5 s
T
A
= 25°C −200
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C P
D
−125
mW
t v 5 s
−200
Pulsed Drain Current
t
p
= 10 ms
I
DM
−600 mA
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Source Current (Body Diode) (Note 2) I
S
−200 mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using the minimum recommended pad size,
or 2 mm
2
, 1 oz Cu.
2. Pulse Test: pulse width v300 ms, duty cycle v2%
http://onsemi.com
P−Channel
MOSFET
V
(BR)DSS
R
DS(ON)
MAX I
D
Max
−20 V
3.5 W @ −4.5 V
4.0 W @ −2.5 V
−0.20 A
5.5 W @ −1.8 V
7.0 W @ −1.5 V
MARKING
DIAGRAM
SOT−1123
CASE 524AA
D
S
G
5 = Specific Device Code
(Rotated 90° Clockwise)
M = Date Code
5 M
1
2
3
Device Package Shipping
†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTNUS3171PZT5G SOT−1123
(Pb−Free)
8000/Tape & Reel
1
3
2
NTNUS3171PZ
http://onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient – Steady State (Note 3)
R
q
JA
1000
°C/W
Junction−to−Ambient – t = 5 s (Note 3)
R
q
JA
600
3. Surface−mounted on FR4 board using the minimum recommended pad size, or 2 mm
2
, 1 oz Cu.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= −250 mA
−20 V
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V, V
DS
= −5.0 V T
J
= 25°C −50
nA
V
GS
= 0 V, V
DS
= −5.0 V T
J
= 85°C −100
V
GS
= 0 V, V
DS
= −16 V T
J
= 25°C −200
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±5.0 V ±100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= −250 mA
−0.4 −0.7 −1.0 V
Drain−to−Source On Resistance R
DS(ON)
V
GS
= −4.5 V, I
D
= −100 mA 2.0 3.5
W
V
GS
= −2.5 V, I
D
= −50 mA 2.6 4.0
V
GS
= −1.8 V, I
D
= −20 mA 3.4 5.5
V
GS
= −1.5 V, I
D
= −10 mA 4.0 7.0
V
GS
= −1.2 V, I
D
= −1.0 mA 6.0
Forward Transconductance g
FS
V
DS
= −5.0 V, I
D
= −125 mA 0.26 S
Source−Drain Diode Voltage V
SD
V
GS
= 0 V, I
S
= −200 mA −0.5 −1.4 V
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
f = 1 MHz, V
GS
= 0 V
V
DS
= −15 V
13
pF
Output Capacitance C
OSS
3.4
Reverse Transfer Capacitance C
RSS
1.6
SWITCHING CHARACTERISTICS, V
GS
= 4.5 V (Note 4)
Turn−On Delay Time
t
d(ON)
V
GS
= −4.5 V, V
DD
= −15 V,
I
D
= −200 mA, R
G
= 2.0 W
30
ns
Rise Time t
r
56
Turn−Off Delay Time t
d(OFF)
196
Fall Time t
f
145
4. Switching characteristics are independent of operating junction temperatures
NTNUS3171PZ
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
543210
0
0.04
0.20
0.28
0.36
0.5 210
0
0.04
0.16
0.28
0.36
Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
54321
1.0
2.0
3.0
4.0
0.350.300.250.200.150.10
1.5
2
2.5
3
3.5
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.50
0.75
1.00
1.25
1.50
1.75
20151050
10
100
1000
10,000
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RES-
ISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
V
GS
= 2.2 thru 2.5 V
T
J
= 25°C
1.8 V
1.6 V
1.4 V
1.2 V
T
J
= 25°C
T
J
= 125°C
T
J
= −55°C
V
DS
≥ 5 V
T
J
= 25°C T
J
= 25°C
V
GS
= 2.5 V
V
GS
= 4.5 V
V
GS
= 4.5 V
I
D
= 200 mA
V
GS
= 0 V
T
J
= 125°C
T
J
= 150°C
150
0.08
0.12
0.16
0.24
0.32
2.0 V
3
0.08
0.12
0.20
0.24
0.32
1.0 V
4.5 V
1.5 2.5
5.0
6.0
7.0
8.0
9.0
I
D
= 200 mA
I
D
= 20 mA
P1-P3P4-P5

NTNUS3171PZT5G

Mfr. #:
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Manufacturer:
ON Semiconductor
Description:
MOSFET T1 20V P-CH SOT-1123
Lifecycle:
New from this manufacturer.
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