NTNUS3171PZT5G

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4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
DRAINTOSOURCE VOLTAGE (V)
R
G
, GATE RESISTANCE (W)
20121020
0
2
4
6
10
12
14
18
100101
1
10
100
1000
Figure 9. Diode Forward Voltage vs. Current
V
SD
, SOURCETODRAIN VOLTAGE (V)
10.80.60.40.20
0
0.02
0.04
0.06
0.08
0.12
C, CAPACITANCE (pF)
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
16
V
GS
= 0 V
T
J
= 25°C
C
iss
C
oss
C
rss
V
DD
= 15 V
I
D
= 200 mA
V
GS
= 4.5 V
t
d(off)
t
d(on)
t
r
t
f
V
GS
= 0 V
T
J
= 25°C
8
0.10
468 141618
NTNUS3171PZ
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5
PACKAGE DIMENSIONS
SOT1123
CASE 524AA01
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
DIM MIN NOM MAX
MILLIMETERS
A 0.34 0.37 0.40
b 0.15 0.22 0.28
c 0.07 0.12 0.17
D 0.75 0.80 0.85
E 0.55 0.60 0.65
0.95 1.00 1.05
L 0.05 0.10 0.15
H
E
0.013 0.015 0.016
0.006 0.009 0.011
0.003 0.005 0.007
0.030 0.031 0.033
0.022 0.024 0.026
0.037 0.039 0.041
0.002 0.004 0.006
MIN NOM MAX
INCHES
D
E
b
c
A
L
Y
X
0.08 (0.0032)
XY
H
E
0.40
0.30
0.90
DIMENSIONS: MILLIMETERS
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
e −−− −−−−
b1 0.10 0.15 0.20 0.004 0.006 0.008
b1
e
0.35
0.25
1
2
3
0.35 0.40
0.014 0.016
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NTNUS3171PZT5G

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Description:
MOSFET T1 20V P-CH SOT-1123
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