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MRF7S16150HR3

P1-P3P4-P6P7-P9P10-P12
MRF7S16150HR3 MRF7S16150HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for WiMAX base station applications with frequencies up to
1700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
• Typical WiMAX Performance: V
DD
= 28 Volts, I
DQ
= 1500 mA,
P
out
= 32 Watts Avg., f = 1600 and 1660 MHz, 802.16d, 64 QAM
3
/
4
,
4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 19.7 dB
Drain Efficiency — 25.4%
Device Output Signal PAR — 8.2 dB @ 0.01% Probability on CCDF
ACPR @ 5.25 MHz Offset — -47.5 dBc in 0.5 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1630 MHz, 150 Watts CW
Output Power
• P
out
@ 1 dB Compression Point w 150 Watts CW
Features
• Characterized with Series Equivalent Large- Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate- Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V
DSS
-0.5, +65 Vdc
Gate-Source Voltage V
GS
-6.0, +10 Vdc
Operating Voltage V
DD
32, +0 Vdc
Storage Temperature Range T
stg
- 65 to +150 °C
Case Operating Temperature T
C
150 °C
Operating Junction Temperature
(1,2)
T
J
225 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 149 W CW
Case Temperature 75°C, 32 W CW
R
θ
JC
0.34
0.37
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf
. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf
.
Select Documentation/Application Notes - AN1955.
Document Number: MRF7S16150H
Rev. 1, 12/2008
Freescale Semiconductor
Technical Data
MRF7S16150HR3
MRF7S16150HSR3
1600- 1660 MHz, 32 W AVG., 28 V
WiMAX
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI-780
MRF7S16150HR3
CASE 465A-06, STYLE 1
NI-780S
MRF7S16150HSR3
Freescale Semiconductor, Inc., 2007 -2008. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF7S16150HR3 MRF7S16150HSR3
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22-A114) IC (Minimum)
Machine Model (per EIA/JESD22-A115) A (Minimum)
Charge Device Model (per JESD22-C101) IV (Minimum)
Table 4. Electrical Characteristics (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
— — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
— — 1 µAdc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
— — 1 µAdc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 348 µAdc)
V
GS(th)
1.2 2 2.7 Vdc
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 1500 mAdc, Measured in Functional Test)
V
GS(Q)
2 2.7 3.5 Vdc
Drain-Source On- Voltage
(V
GS
= 10 Vdc, I
D
= 3.48 Adc)
V
DS(on)
0.1 0.2 0.3 Vdc
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
— 1.09 — pF
Output Capacitance
(V
DS
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
— 585 — pF
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
C
iss
— 363 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1500 mA, P
out
= 32 W Avg., f = 1600 MHz and f =
1660 MHz, WiMAX Signal, 802.16d, 7 MHz Channel Bandwidth, 64 QAM
3
/
4
, 4 bursts, PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 0.5 MHz Channel Bandwidth @ ±5.25 MHz Offset.
Power Gain G
ps
18.5 19.7 21.5 dB
Drain Efficiency η
D
24 25.4 — %
Output Peak-to - Average Ratio @ 0.01% Probability on CCDF PAR 7.7 8.2 — dB
Adjacent Channel Power Ratio ACPR -58 -47.5 -45 dBc
Input Return Loss IRL — -12.1 -7 dB
1. Part internally matched both on input and output.
(continued)
MRF7S16150HR3 MRF7S16150HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (T
C
= 25°C unless otherwise noted) (continued)
Characteristic Symbol
Min Typ Max Unit
Typical Performances OFDM Signal (In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1500 mA, P
out
= 32 W Avg.,
f = 1600 MHz and f = 1660 MHz, WiMAX Signal, OFDM Single-Carrier, 7 MHz Channel Bandwidth, 64 QAM
3
/
4
, 4 Bursts, PAR = 9.5 dB @
0.01% Probability on CCDF.
Mask System Type G @ P
out
= 32 W Avg.
Point B at 3.5 MHz Offset
Point C at 5 MHz Offset
Point D at 7.4 MHz Offset
Point E at 14 MHz Offset
Point F at 17.5 MHz Offset
Mask
—
—
—
—
—
-27
-36
-41
-59
-62
—
—
—
—
—
dBc
Relative Constellation Error @ P
out
= 32 W Avg.
(1)
RCE — - 29.6 — dB
Error Vector Magnitude
(1)
(Typical EVM Performance @ P
out
= 32 W Avg. with OFDM 802.16d
Signal Call)
EVM — 3.3 — % rms
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1500 mA, 1600-1660 MHz Bandwidth
Video Bandwidth @ 180 W PEP P
out
where IM3 = -30 dBc
(Tone Spacing from 100 kHz to VBW)
∆IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
— 20 —
MHz
Gain Flatness in 60 MHz Bandwidth @ P
out
= 32 W Avg. G
F
— 0.292 — dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ P
out
= 150 W CW
Φ — 82.71 — °
Average Group Delay @ P
out
= 150 W CW, f = 1630 MHz Delay — 7.19 — ns
Part-to- Part Insertion Phase Variation @ P
out
= 150 W CW,
f = 1630 MHz, Six Sigma Window
∆Φ — 22.38 — °
Gain Variation over Temperature
(-30°C to +85°C)
∆G — 0.01387 — dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
∆P1dB — 0.409 — dBm/°C
1. RCE = 20Log(EVM/100)
P1-P3P4-P6P7-P9P10-P12

MRF7S16150HR3

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Manufacturer:
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Description:
RF MOSFET Transistors HV7 WIMAX 1.6GHZ NI780H
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