MRF7S16150HR3 MRF7S16150HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
P
out
, OUTPUT POWER (WATTS) PEP
IMD, INTERMODULATION DISTORTION (dBc)
−70
−10
1 100
−40
−50
10
−30
−20
−60
7th Order
5th Order
3rd Order
400
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWO−TONE SPACING (MHz)
10
−60
0
IM3−U
−20
−30
−50
1 100
IMD, INTERMODULATION DISTORTION (dBc)
−40
IM3−L
IM5−U
IM5−L
IM7−L
IM7−U
−75
−15
−50
−55
−60
−70
−45
−65
Figure 9. WiMAX, ACPR, Power Gain and Drain
Efficiency versus Output Power
0
P
out
, OUTPUT POWER (WATTS) CW
60
35
30
10
10 300
20
ACPR
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
ACPR (dBc)
η
D
40
25
15
G
ps
V
DD
= 28 Vdc, I
DQ
= 1500 mA
f = 1630 MHz, 802.16d, 64 QAM
3
/
4
4 Bursts, 7 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB
@ 0.01% Probability on CCDF
V
DD
= 28 Vdc, I
DQ
= 1500 mA
f1 = 1625 MHz, f2 = 1635 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
V
DD
= 28 Vdc, P
out
= 180 W (PEP), I
DQ
= 1500 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1630 MHz
400
14
21
0
70
P
out
, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
V
DD
= 28 Vdc
I
DQ
= 1500 mA
f = 1630 MHz
T
C
= −30_C
25_C
−30_C
85_C
101
19
18
17
16
15
50
40
30
20
10
η
D
, DRAIN EFFICIENCY (%)
G
ps
η
D
G
ps
, POWER GAIN (dB)
100
Figure 11. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
G
ps
, POWER GAIN (dB)
200
15
21
0 100
16
17
18
I
DQ
= 1500 mA
f = 1630 MHz
300
V
DD
= 24 V
28 V
−10
45
50
55
1 100
−40
−35
−30
−25
−20
20
60
25_C
85_C
19
20
32 V
5
T
C
= −30_C
25_C
−30_C
85_C
−30_C
85_C
25_C
