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BFS17NQTA

P1-P3P4-P6P7-P7
BFS17N
Document Number DS32160 Rev. 3 - 2
1 of 7
www.diodes.com
October 2012
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
BFS17N
NEW PRODUCT
NPN RF TRANSISTOR IN SOT23
Features
• 3.2GHz unity gain for RF switching applications
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP capable (Note 4)
Applications
• RF switch
Mechanical Data
• Case: SOT23
• Case material: molded plastic. “Green” molding compound.
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
• Weight: 0.008 grams (approximate)
Ordering Information (Notes 4 & 5)
Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
BFS17NTA AEC-Q101 E1N 7 8 3,000
BFS17NQTA Automotive E1N 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com.
Marking Information
E1N = Product type Marking Code
Device symbol
Top View
Pin Out
E1N
e3
C
E
B
SOT23
Top View
C
E
B
BFS17N
Document Number DS32160 Rev. 3 - 2
2 of 7
www.diodes.com
October 2012
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
BFS17N
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
20 V
Collector-Emitter Voltage
V
CEO
11 V
Emitter-Base Voltage
V
EBO
3 V
Continuous Collector Current
I
C
50 mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
(Note 6)
P
D
310
mW
(Note 7) 350
Thermal Resistance, Junction to Ambient
(Note 6)
R
θJA
403
°C/W
(Note 7) 357
Thermal Resistance, Junction to Leads (Note 8)
R
θJL
350
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
ESD Ratings (Note 9)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 2,000 V 2
Electrostatic Discharge - Machine Model ESD MM 100 V A
Notes: 6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air condition;
7. Same as Note 6, expect the device is mounted on 15mm X 15mm X 1.6mm FR4 PCB
8. Thermal resistance from junction to solder-point (at the end of the leads).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
BFS17N
Document Number DS32160 Rev. 3 - 2
3 of 7
www.diodes.com
October 2012
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
BFS17N
NEW PRODUCT
Thermal Characteristics and Derating information
0 255075100125150
0.0
0.1
0.2
0.3
0.4
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
50
100
150
200
250
300
350
400
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
10m 100m 1 10 100 1k
0.1
1
10
Single Pulse. T
amb
=25°C
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
P1-P3P4-P6P7-P7

BFS17NQTA

Mfr. #:
Buy BFS17NQTA
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT RF Transistor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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