BFS17NQTA

BFS17N
Document Number DS32160 Rev. 3 - 2
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Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
20
V
I
C
= 10µA
Collector-Emitter Breakdown Voltage (Note 10)
BV
CEO
11
V
I
C
= 1mA
Emitter-Base Breakdown Voltage
BV
EBO
3
V
I
E
= 10µA
Collector Cutoff Current
I
CBO
0.5 µA
V
CB
= 10V
Emitter Cutoff Current
I
EBO
0.5 µA
V
EB
= 2V
Static Forward Current Transfer Ratio (Note 10)
h
FE
56
180
I
C
= 5mA, V
CE
= 10V
Collector-Emitter Saturation Voltage (Note 10)
V
CE
(
sat
)
0.5 V
I
C
= 25mA, I
B
= 5mA
Transition Frequency (Note 10)
f
T
1.4 3.2
GHz
I
E
= 25mA, V
CE
= 5V,
f = 500MHz
Collector Output Capacitance (Note 10)
C
ob
0.8 1.5 pF
V
CB
= 10V, f = 1MHz
Notes: 10. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%
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Typical Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
0.1 1 10 100
400
500
600
700
800
900
1000
1100
0.0 5.0 10.0 15.0 20.0 25.0 30.0
0
1
2
3
4
0 5 10 15 20
0.6
0.8
1.0
1.2
1.4
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
012345678910
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.1 1 10 100
0
50
100
150
200
T=-55°C
T=25°C
T=85°C
T=150°C
V
CE
=5V
V
BE(ON)
(V)
I
C
Collector Current (mA)
V
CE
=10V
V
CE
=5V
V
CE
=2V
Tamb=25°C
f=500MHz
fT (GHz)
I
C
Collector Current (mA)
V
CE
=1V
Ta=25°C
f=1MHz
C
CB
Capacitance (pF)
V
CB
Collector-Base Voltage (V)
Ta=25°C
f=1MHz
C
EB
Capacitance (pF)
V
EB
Emitter-Base Voltage (V)
Ten base steps
100μA per step
I
C
Collector Current (A)
V
CE
(V)
T=-55°C
T=25°C
T=85°C
T=150°C
V
CE
=5V
hFE Gain
I
C
Collector Current (mA)
BFS17N
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α
0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C
2.0
E
1.35
A
M
J
L
D
F
B
C
H
K
G
K1
X
E
Y
C
Z

BFS17NQTA

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT RF Transistor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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