IXYN150N60B3 Datasheet IXYN150N60B3 | P1-P3

600V XPT

TM

IGBT

GenX3

TM

V

CES

= 600V

I

C110

= 140A

V

CE(sat)







2.20V

t

fi(typ)

= 80ns

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 175°C 600 V

V

CGR

T

J

= 25°C to 175°C, R

GE

= 1M 600 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C (Chip Capability) 250 A

I

LRMS

Terminal Current Limit 200 A

I

C110

T

C

= 110°C 140 A

I

CM

T

C

= 25°C, 1ms 750 A

I

A

T

C

= 25°C 75 A

E

AS

T

C

= 25°C 1 J

SSOA V

GE

= 15V, T

VJ

= 150°C, R

G

= 2 I

CM

= 300 A

(RBSOA) Clamped Inductive Load V

CE

 V

CES

t

sc

V

GE

= 15V, V

CE

= 360V, T

J

= 150°C 8 μs

(SCSOA) R

G

= 82, Non Repetitive

P

C

T

C

= 25°C 830 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

V

ISOL

50/60Hz t = 1min 2500 V~

I

ISOL

 1mA t = 1s 3000 V~

M

d

Mounting Torque 1.5/13 Nm/lb.in

Terminal Connection Torque 1.3/11.5 Nm/lb.in

Weight 30 g

DS100548B(11/16)

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250μA, V

GE

= 0V 600 V

V

GE(th)

I

C

= 250μA, V

CE

= V

GE

3.0 5.5 V

I

CES

V

CE

= V

CES

,

V

GE

= 0V 10 μA

T

J

= 150°C 1 mA

I

GES

V

CE

= 0V, V

GE

= ±20V ±200 nA

V

CE(sat)

I

C

= 150A, V

GE

= 15V, Note 1 1.77 2.20 V

T

J

= 150°C 2.10 V

Features



Optimized for Low Conduction and

Switching Losses



miniBLOC, with Aluminium Nitride

Isolation



International Standard Package



Isolation Voltage 2500V~



Optimized for 10-30kHz Switching



Square RBSOA



Avalanche Rated



Short Circuit Capability



High Current Handling Capability

Advantages



High Power Density



Low Gate Drive Requirement

Applications



Power Inverters



UPS



Motor Drives



SMPS



PFC Circuits



Battery Chargers



Welding Machines



Lamp Ballasts

Extreme Light Punch through

IGBT for 10-30kHz Switching

IXYN150N60B3

SOT-227B, miniBLOC

G = Gate, C = Collector, E = Emitter

 either emitter terminal can be used as

Main or Kelvin Emitter

G

E

E 

C

E153432

E

Preliminary Technical Information

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYN150N60B3

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 60A, V

CE

= 10V, Note 1 40 70 S

C

ie

s

6950 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 400 pF

C

res

150 pF

Q

g(on)

260 nC

Q

ge

I

C

= 150A, V

GE

= 15V, V

CE

= 0.5 • V

CES

39 nC

Q

gc

115 nC

t

d(on)

27 ns

t

ri

88 ns

E

on

4.20 mJ

t

d(off)

167 ns

t

fi

80 ns

E

of

f

2.60 mJ

t

d(on)

26 ns

t

ri

84 ns

E

on

5.30 mJ

t

d(off)

220 ns

t

fi

110 ns

E

off

3.76 mJ

R

thJC

0.18 °C/W

R

thCS

0.05 °C/W

Notes:

1. Pulse test, t  300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

CE

(clamp), T

J

or R

G

.

Inductive load, T

J

= 150°C



C

= 75A, V

GE

= 15V

V

CE

= 400V, R

G

= 2

Note 2

Inductive load, T

J

= 25°C

I

C

= 75A, V

GE

= 15V

V

CE

= 400V, R

G

= 2

Note 2

PRELIMANARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

SOT-227B (IXYN) OUTLINE

M4-7 NUT

(4 PLACES)

O

H

G

F

E

C

S

D

L

N

M

A

B

J

U

IXYN150N60B3

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

300

0 0.5 1 1.5 2 2.5 3 3.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

12V

11V

9V

6V

10V

8V

7V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

100

200

300

400

500

600

700

800

0 2 4 6 8 10 12 14 16 18 20

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

10V

11V

12V

8V

9V

13V

7V

14V

Fig. 3. Output Characteristics @ T

J

= 150ºC

0

50

100

150

200

250

300

00.511.522.533.544.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

12V

11V

9V

7V

8V

6V

10V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 150A

I

C

= 75A

I

C

= 300A

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

7 8 9 101112131415

V

GE

- Volts

V

CE

- Volts

I

C

= 300A

T

J

= 25ºC

150A

75A

Fig. 6. Input Admittance

0

50

100

150

200

250

300

350

400

4567891011

V

GE

- Volts

I

C

-

Amperes

T

J

= 150ºC

25ºC

- 40ºC

IXYN150N60B3

IXYN150N60B3

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