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IXYN150N60B3
P1-P3
P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYN150N60B3
Fi
g. 11. Maxi
mum Transi
ent Thermal
I
m
pedance
0.
001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
Pu
lse Widt
h -
Secon
ds
Z
(th)JC
- K
/
W
Fi
g. 11.
M
ax
i
mum
Transi
ent Thermal
I
mpe
dance
aaaaa
0.
3
Fi
g. 7.
Transconduc
tance
0
20
40
60
80
100
120
140
160
180
0
50
100
150
200
250
300
3
50
400
I
C
- Am
p
e
re
s
g
f s
-
Si
e
mens
T
J
= -
40º
C
150º
C
25º
C
Fi
g. 10.
Rev
erse-B
i
as Safe O
per
ati
ng Ar
ea
0
50
100
150
200
250
300
350
100
200
300
400
500
600
V
CE
- Vo
lts
I
C
- A
m
p
e
re
s
T
J
= 150º
C
R
G
= 2
Ω
dv
/
dt <
10V / n
s
Fi
g. 8. G
ate Char
ge
0
2
4
6
8
10
12
14
16
0
20
40
60
80
100
120
140
160
180
200
220
240
260
Q
G
- Nano
C
o
ulo
m
b
s
V
GE
- V
o
lts
V
CE
= 30
0V
I
C
= 15
0A
I
G
= 10
mA
Fi
g. 9
. Capaci
ta
nce
100
1,000
10,
000
0
5
10
15
20
25
30
35
40
V
CE
- Vo
lts
Capaci
t
ance -
Pico
Farad
s
f
= 1 MH
z
C
ies
C
oes
C
res
© 2016 IXYS CORPORATION, All Rights Reserved
IXYN150N60B3
Fi
g. 12. I
nducti
v
e Sw
it
ching
Energy
Loss v
s.
Gat
e Resi
stance
1
2
3
4
5
6
7
13579
1
1
1
3
1
5
R
G
- Ohm
s
E
of
f
- M
illiJ
o
u
le
s
1
3
5
7
9
11
13
E
on
- M
illiJ
o
u
le
s
E
off
E
on
T
J
= 150º
C , V
GE
= 15
V
V
CE
= 4
0
0
V
I
C
= 50
A
I
C
= 100A
Fi
g. 15. I
nducti
v
e Turn-of
f Sw
i
tchi
ng Ti
mes v
s.
Gat
e Resi
stance
0
40
80
120
160
200
240
280
13
57
9
1
1
1
3
1
5
R
G
- O
hms
t
f i
- Nanoseconds
100
200
300
400
500
600
700
800
t
d(
o
ff)
-
Nanoseconds
t
f i
t
d(off)
T
J
= 150º
C, V
GE
= 15V
V
CE
= 400V
I
C
= 100A
I
C
= 50
A
Fi
g. 1
3. Inducti
v
e
Sw
i
tching Energy
Loss
v
s
.
Col
lector
Cur
rent
1
2
3
4
5
6
50
55
60
65
70
75
80
85
90
95
100
I
C
-
Amperes
E
off
- M
illiJ
o
u
le
s
0
2
4
6
8
10
E
on
- M
illiJ
o
u
le
s
E
off
E
on
R
G
= 2
Ω
,
V
GE
= 15
V
V
CE
= 4
00
V
T
J
= 150º
C
T
J
= 25º
C
F
ig
.
1
4
.
In
d
u
c
t
iv
e
S
witc
h
in
g
E
n
e
r
g
y L
o
s
s
v
s
.
Junc
ti
on Te
mpe
rature
0
1
2
3
4
5
6
7
25
50
75
100
125
150
T
J
-
Degrees Cen
t
igr
a
de
E
of
f
- MilliJou
les
0
2
4
6
8
10
12
14
E
on
- Mi
lliJ
o
u
le
s
E
off
E
on
R
G
= 2
Ω
,
V
GE
= 15
V
V
CE
= 400V
I
C
= 50
A
I
C
= 100A
Fi
g. 16. Indu
c
ti
v
e
Turn-off
Sw
i
tchi
ng Times v
s.
Col
l
ector C
urrent
0
40
80
120
160
200
240
50
55
60
65
70
75
80
85
90
95
100
I
C
-
Amperes
t
f i
-
Nanosecond
s
140
160
180
200
220
240
260
t
d(of
f)
-
Nanoseconds
t
f i
t
d(off)
R
G
= 2
Ω
, V
GE
= 15
V
V
CE
= 4
0
0
V
T
J
= 150º
C
T
J
= 25
ºC
Fi
g. 17. Induct
iv
e Turn-of
f Sw
i
tchi
ng Times v
s.
Juncti
on Temperature
0
40
80
120
160
200
240
25
50
75
100
125
150
T
J
-
Degrees Cen
t
igr
ade
t
f i
- N
a
n
o
s
e
c
o
n
d
s
140
160
180
200
220
240
260
t
d(
o
ff)
-
Nanoseconds
t
f i
t
d(off)
R
G
= 2
Ω
, V
GE
= 15
V
V
CE
= 400V
I
C
= 50A,
100A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYN150N60B3
IXYS REF: IXY_150N60B3(8D-Y42) 11-03-16
Fi
g. 19. I
nduc
ti
v
e Turn-on Sw
i
tchi
ng Ti
me
s v
s.
Col
l
e
ctor Curr
e
nt
20
40
60
80
100
120
140
160
50
55
60
65
70
75
80
85
90
95
100
I
C
- A
mp
e
re
s
t
r i
-
Nanosecond
s
20
22
24
26
28
30
32
34
t
d(on)
-
Nanoseconds
t
r i
t
d(on)
R
G
= 2
Ω
, V
GE
= 15
V
V
CE
= 400V
T
J
= 25
º
C
T
J
= 150º
C
Fi
g. 20. I
nducti
v
e Turn-
on Sw
i
tchi
ng Ti
mes v
s.
Junc
ti
on Te
mpe
rature
0
20
40
60
80
100
120
140
160
180
200
25
50
75
100
125
150
T
J
-
Degrees C
ent
igr
a
de
t
r i
-
Nanosecond
s
16
18
20
22
24
26
28
30
32
34
36
t
d(
on)
-
Nanoseconds
t
r i
t
d(on)
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 400V
I
C
= 100A
I
C
= 50
A
Fi
g. 18. I
nducti
v
e Turn-
on Sw
i
tchi
ng Ti
mes v
s.
Gat
e Resi
stance
0
40
80
120
160
200
240
13579
1
1
1
3
1
5
R
G
- O
hms
t
r i
-
Nanosecond
s
0
20
40
60
80
100
120
t
d(on)
-
Nanoseconds
t
r i
t
d(on)
T
J
= 150º
C, V
GE
= 15
V
V
CE
= 400V
I
C
= 50
A
I
C
= 100A
P1-P3
P4-P6
IXYN150N60B3
Mfr. #:
Buy IXYN150N60B3
Manufacturer:
Littelfuse
Description:
IGBT Transistors DISC IGBT XPT-GENX3 (MINI
Lifecycle:
New from this manufacturer.
Delivery:
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IXYN150N60B3