©2001 Fairchild Semiconductor Corporation HGT1S3N60A4DS, HGTP3N60A4D Rev. B
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
f
MAX
, OPERATING FREQUENCY (kHz)
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
50
300
623
600
100
54
200
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
ØJC
= 1.8
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
T
J
= 125
o
C, R
G
= 50Ω, L = 1mH, V
CE
= 390V
T
C
V
GE
15V
75
o
C
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
10 11 12 15
4
6
14
0
24
40
5618
13 14
8
10
12
16
8
16
32
48
20 64
V
CE
= 390V, R
G
= 50Ω, T
J
= 125
o
C
t
SC
I
SC
023
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
4
8
45
16
12
20
1
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 150
o
C
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
GE
= 12V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
4
8
16
12
20
02341
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250µs
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 125
o
C
E
ON2
, TURN-ON ENERGY LOSS (µJ)
160
80
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
120
40
200
32456
0
1
240
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 50Ω, L = 1mH, V
CE
= 390V
120
E
OFF
, TURN-OFF ENERGY LOSS (µJ)
0
20
80
40
100
140
60
324561
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
R
G
= 50Ω, L = 1mH, V
CE
= 390V
HGT1S3N60A4DS, HGTP3N60A4D
