Philips Semiconductors
BSH111
N-channel enhancement mode field-effect transistor
Product data Rev. 02 — 26 April 2002 5 of 13
9397 750 09629
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8. Characteristics
Table 5: Characteristics
T
j
=25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
=10µA; V
GS
=0V
T
j
=25°C5575-V
T
j
= −55 °C50--V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
=V
GS
;
Figure 9
T
j
=25°C 0.4 1.0 1.3 V
T
j
= 150 °C 0.3 - - V
T
j
= −55 °C - - 2.5 V
I
DSS
drain-source leakage current V
DS
= 44 V; V
GS
=0V
T
j
=25°C - 0.01 1.0 µA
T
j
= 150 °C--10µA
I
GSS
gate-source leakage current V
GS
= ±8 V; V
DS
= 0 V - 10 100 nA
R
DSon
drain-source on-state
resistance
V
GS
= 2.5 V; I
D
=75mA;
Figure 7 and 8
T
j
=25°C - 2.4 5 Ω
T
j
= 150 °C - - 7.4 Ω
V
GS
= 4.5 V; I
D
= 500 mA;
Figure 7 and 8
T
j
=25°C - 2.3 4 Ω
V
GS
= 1.8 V; I
D
=75mA;
Figure 7 and 8
T
j
=25°C - 3.1 8 Ω
Dynamic characteristics
g
fs
forward transconductance V
DS
= 10 V; I
D
= 200 mA;
Figure 11
100 380 - mS
Q
g(tot)
total gate charge I
D
= 0.5 A; V
DS
=44V;
V
GS
=8V;Figure 14
- 1.0 - nC
Q
gs
gate-source charge - 0.05 - nC
Q
gd
gate-drain (Miller) charge - 0.5 - nC
C
iss
input capacitance V
GS
=0V; V
DS
=10V;
f = 1 MHz; Figure 12
-1740pF
C
oss
output capacitance - 7 30 pF
C
rss
reverse transfer capacitance - 4 10 pF
t
on
turn-on time V
DD
= 50 V; R
D
= 250 Ω;
V
GS
=10V; R
G
=50Ω;
R
GS
=50Ω
- 4 10 ns
t
off
turn-off time - 11 15 ns
