Philips Semiconductors
BSH111
N-channel enhancement mode field-effect transistor
Product data Rev. 02 — 26 April 2002 7 of 13
9397 750 09629
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
T
j
=25°CT
j
=25°C and 150 °C; V
DS
> I
D
× R
DSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T
j
=25°C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
03aa73
0
0.2
0.4
0.6
0.8
0 0.4 0.8 1.2 1.6 2
V
DS
(V)
I
D
(A)
V
GS
= 4.5 V
3 V
2 V
1.8 V
1.6 V
1.4 V
03aa75
0
0.2
0.4
0.6
0.8
0
1
23
45
V
GS
(V)
I
D
(A)
T
j
= 25 °C
150 °C
03aa74
0
4
8
12
16
20
0
0.2
0.4
0.6
0.8
I
D
(A)
R
DSon
(Ω)
3 V
2 V
1.8 V
V
GS
= 4.5 V
1.6 V
1.4 V
0
0.6
1.2
1.8
2.4
-60 0
60
120
180
a
T
j
(°C)
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
