IXTP5N60P Datasheet CX8045GA04000H0PST03, IXTP5N60P, IXTA5N60P | P1-P3

G = Gate D = Drain

S = Source TAB = Drain

DS99426E(04/06)

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified) Min. Typ. Max.

BV

DSS

V

GS

= 0 V, I

D

= 250 μA 600 V

V

GS(th)

V

DS

= V

GS

, I

D

= 50μA 3.0 5.5 V

I

GSS

V

GS

= ±30 V, V

DS

= 0 V ±100 nA

I

DSS

V

DS

= V

DSS

5 μA

V

GS

= 0 V T

J

= 125°C50μA

R

DS(on)

V

GS

= 10 V, I

D

= 0.5 I

D25

1.7 Ω

Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %

PolarHV

TM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Features

z

International standard packages

z

Unclamped Inductive Switching (UIS)

rated

z

Low package inductance

- easy to drive and to protect

Advantages

z

Easy to mount

z

Space savings

z

High power density

TO-263 (IXTA)

TO-220 (IXTP)

D

(TAB)

G

S

G

S

(TAB)

IXTA 5N60P

IXTP 5N60P

V

DSS

= 600 V

I

D25

= 5 A

R

DS(on)

≤≤

≤ 1.7

ΩΩ

Ω

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 175°C 600 V

V

DGR

T

J

= 25°C to 175°C; R

GS

= 1 MΩ 600 V

V

GSS

Continuous ± 30 V

V

GSM

Transient ± 40 V

I

D25

T

C

= 25°C5A

I

DM

T

C

= 25°C, pulse width limited by T

JM

10 A

I

AR

T

C

= 25°C5A

E

AR

T

C

= 25°C20mJ

E

AS

T

C

= 25°C 360 mJ

dv/dt I

S

≤ I

DM

, di/dt ≤ 100 A/μs, V

DD

≤ V

DSS

, 10 V/ns

T

J

≤ 150°C, R

G

= 18 Ω

P

D

T

C

= 25°C 100 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6 mm (0.062 in.) from case for 10 s 300 °C

T

SOLD

Plastic body for 10 s 260 °C

M

d

Mounting torque (TO-220) 1.13/10 Nm/lb.in.

Weight TO-220 4 g

TO-263 3 g

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA 5N60P

IXTP 5N60P

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Min. Typ. Max.

g

fs

V

DS

= 10 V; I

D

= 0.5 I

D25

, pulse test 3.0 5.0 S

C

iss

750 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 78 pF

C

rss

6.3 pF

t

d(on)

22 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 0.5 I

D25

24 ns

t

d(off)

R

G

= 18 Ω (External) 55 ns

t

f

17 ns

Q

g(on)

14.2 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 0.5 I

D25

4.8 nC

Q

gd

4.8 nC

R

thJC

1.25 °C/W

R

thCS

(TO-220) 0.25 °C/W

Source-Drain Diode Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

I

S

V

GS

= 0 V 5 A

I

SM

Repetitive 15 A

V

SD

I

F

= I

S

, V

GS

= 0 V, I

F

= 5 A, -di/dt = 100 A/μs 1.5 V

t

rr

Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 500 ns

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2

TO-263 (IXTA) Outline

TO-220 (IXTP) Outline

Pins: 1 - Gate 2 - Drain

3 - Source 4 - Drain

IXTA 5N60P

IXTP 5N60P

Fig. 2. Extended Output Characteristics

@ 25

º

C

0

1

2

3

4

5

6

7

8

9

10

0 3 6 9 12 15 18 21 24 27 30

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

6V

Fig. 3. Output Characteristics

@ 125

º

C

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

0246810121416

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

6V

5V

Fig. 1. Output Characteristics

@ 25

º

C

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

012345678

V

D S

- Volts

I

D

- Amperes

V

GS =

10V

8V

7V

6V

Fig. 4. R

DS(on

)

Norm alized to 0.5 I

D25

Value vs. Junction Temperature

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

D S ( o n )

- Normalized

I

D

= 5A

I

D

= 2.5A

V

GS

= 10V

Fig. 6. Drain Current vs. Case

Temperature

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

Fig. 5. R

DS(on)

Norm alized to

0.5 I

D25

Value vs. I

D

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

012345678910

I

D

- Amperes

R

D S ( o n )

- Normalized

T

J

= 125

º

C

T

J

= 25

º

C

V

GS

= 10V

IXTP5N60P

IXTP5N60P

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