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IXTP5N60P

P1-P3P4-P4
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 5N60P
IXTP 5N60P
Fig. 11. Capacitance
1
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - picoFarads
C
iss
C
oss
C
rss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 2 4 6 8 10121416
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 300V
I
D
= 2.5A
I
G
= 10mA
Fig. 7. Input Admittance
0
1
2
3
4
5
6
44.5 55.566.57
V
G S
- Volts
I
D
- Amperes
T
J
= 125
º
C
25
º
C
-40
º
C
Fig. 8. Transconductance
0
1
2
3
4
5
6
7
8
9
0123456
I
D
- Amperes
g
f s
- Siemens
T
J
= -40
º
C
25
º
C
125
º
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
2
4
6
8
10
12
14
0.5 0.6 0.7 0.8 0.9
V
S D
- Volts
I
S
- Amperes
T
J
= 125
º
C
T
J
= 25
º
C
Fig. 12. Maximum Transient Thermal
Resistance
0.01
0.10
1.00
10.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
R
( t h ) J C
-
º
C / W
P1-P3P4-P4

IXTP5N60P

Mfr. #:
Buy IXTP5N60P
Manufacturer:
Description:
IGBT Transistors MOSFET 5.0 Amps 600 V 1.6 Ohm Rds
Lifecycle:
New from this manufacturer.
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