BC847BLT1G Datasheet NSVBC850BLT1G, BC846BLT1G, BC847BLT1G | P1-P3

January, 2017 − Rev. 17

1 Publication Order Number:

BC846ALT1/D

BC846ALT1G Series

General Purpose

Transistors

NPN Silicon

Features

• Moisture Sensitivity Level: 1

• ESD Rating − Human Body Model: > 4000 V

ESD Rating − Machine Model: > 400 V

• S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector-Emitter Voltage

BC846

BC847, BC850

BC848, BC849

V

CEO

65

45

30

Vdc

Collector−Base Voltage

BC846

BC847, BC850

BC848, BC849

V

CBO

80

50

30

Vdc

Emitter−Base Voltage

BC846

BC847, BC850

BC848, BC849

V

EBO

6.0

5.0

Vdc

Collector Current − Continuous I

C

100 mAdc

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board,

(Note 1)

T

A

= 25°C

Derate above 25°C

P

D

225

1.8

mW

mW/°C

Thermal Resistance,

Junction−to−Ambient (Note 1)

R

q

JA

556 °C/W

Total Device Dissipation

Alumina Substrate (Note 2)

T

A

= 25°C

Derate above 25°C

P

D

300

2.4

mW

mW/°C

Thermal Resistance,

Junction−to−Ambient (Note 2)

R

q

JA

417 °C/W

Junction and Storage

Temperature Range

T

J

, T

stg

−55 to

+150

°C

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in 99.5% alumina.

SOT−23

CASE 318

STYLE 6

MARKING DIAGRAM

1

2

3

COLLECTOR

3

1

BASE

2

EMITTER

See detailed ordering and shipping information in the package

dimensions section on page 12 of this data sheet.

ORDERING INFORMATION

1

XX M G

G

XX = Device Code

M = Date Code*

G = Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

www.onsemi.com

BC846ALT1G Series

www.onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage BC846A, B

(I

C

= 10 mA) BC847A, B, C, BC850B, C

BC848A, B, C, BC849B, C

V

(BR)CEO

65

45

30

−

V

Collector−Emitter Breakdown Voltage BC846A, B

(I

C

= 10 mA, V

EB

= 0) BC847A, B, C BC850B, C

BC848A, B, C, BC849B, C

V

(BR)CES

80

50

30

−

V

Collector−Base Breakdown Voltage BC846A, B

(I

C

= 10 mA) BC847A, B, C, BC850B, C

BC848A, B, C, BC849B, C

V

(BR)CBO

80

50

30

−

V

Emitter−Base Breakdown Voltage BC846A, B

(I

E

= 1.0 mA) BC847A, B, C, BC850B, C

BC848A, B, C, BC849B, C

V

(BR)EBO

6.0

5.0

−

V

Collector Cutoff Current (V

CB

= 30 V)

(V

CB

= 30 V, T

A

= 150°C)

I

CBO

−

15

5.0

nA

mA

ON CHARACTERISTICS

DC Current Gain BC846A, BC847A, BC848A

(I

C

= 10 mA, V

CE

= 5.0 V) BC846B, BC847B, BC848B

BC847C, BC848C

(I

C

= 2.0 mA, V

CE

= 5.0 V) BC846A, BC847A, BC848A

BC846B, BC847B, BC848B,

BC849B, BC850B

BC847C, BC848C, BC849C, BC850C

h

FE

−

110

200

420

90

150

270

180

290

520

−

220

450

800

−

Collector−Emitter Saturation Voltage (I

C

= 10 mA, I

B

= 0.5 mA)

Collector−Emitter Saturation Voltage (I

C

= 100 mA, I

B

= 5.0 mA)

V

CE(sat)

−

0.25

0.6

V

Base−Emitter Saturation Voltage (I

C

= 10 mA, I

B

= 0.5 mA)

Base−Emitter Saturation Voltage (I

C

= 100 mA, I

B

= 5.0 mA)

V

BE(sat)

−

0.7

0.9

−

V

Base−Emitter Voltage (I

C

= 2.0 mA, V

CE

= 5.0 V)

Base−Emitter Voltage (I

C

= 10 mA, V

CE

= 5.0 V)

V

BE(on)

580

−

660

−

700

770

mV

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(I

C

= 10 mA, V

CE

= 5.0 Vdc, f = 100 MHz)

f

T

100 − − MHz

Output Capacitance (V

CB

= 10 V, f = 1.0 MHz) C

obo

− − 4.5 pF

Noise Figure (I

C

= 0.2 mA,

V

CE

= 5.0 Vdc, R

S

= 2.0 kW, BC846A,B, BC847A,B,C, BC848A,B,C

f = 1.0 kHz, BW = 200 Hz) BC849B,C, BC850B,C

NF

−

10

4.0

dB

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

BC846ALT1G Series

www.onsemi.com

3

BC846A, BC847A, BC848A, SBC846A

Figure 1. DC Current Gain vs. Collector

Current

I

C

, COLLECTOR CURRENT (A)

0.10.010.001

0

100

200

300

h

FE

, DC CURRENT GAIN

1

V

CE

= 1 V

150°C

−55°C

25°C

Figure 2. DC Current Gain vs. Collector

Current

I

C

, COLLECTOR CURRENT (A)

0.10.010.001

0

100

200

300

h

FE

, DC CURRENT GAIN

1

V

CE

= 5 V

150°C

−55°C

25°C

Figure 3. Collector Emitter Saturation Voltage

vs. Collector Current

I

C

, COLLECTOR CURRENT (A)

0.10.010.0010.0001

0

0.02

0.18

Figure 4. Base Emitter Saturation Voltage vs.

Collector Current

Figure 5. Base Emitter Voltage vs. Collector

Current

I

C

, COLLECTOR CURRENT (A) I

C

, COLLECTOR CURRENT (A)

0.10.010.0010.0001

0.2

0.3

0.5

0.6

0.7

0.8

1.0

0.10.010.0010.0001

0.2

0.3

0.5

0.6

0.8

0.9

1.0

1.2

V

CE(sat)

, COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

V

BE(sat)

, BASE−EMITTER

SATURATION VOLTAGE (V)

V

BE(on)

, BASE−EMITTER VOLTAGE (V)

I

C

/I

B

= 20

150°C

−55°C

25°C

0.4

0.9

I

C

/I

B

= 20

150°C

−55°C

25°C

0.4

0.7

1.1

V

CE

= 5 V

150°C

−55°C

25°C

0.04

0.06

0.08

0.10

0.12

0.14

0.16

BC847BLT1G

BC847BLT1G

Products related to this Datasheet