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BC847BLT1G

P1-P3P4-P6P7-P9P10-P12P13-P13
BC846ALT1G Series
www.onsemi.com
7
BC847B, BC848B, BC849B, BC850B, SBC847B, SBC848B
Figure 19. DC Current Gain vs. Collector
Current
I
C
, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
600
h
FE
, DC CURRENT GAIN
1
V
CE
= 1 V
150°C
−55°C
25°C
300
400
500
Figure 20. DC Current Gain vs. Collector
Current
I
C
, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
600
h
FE
, DC CURRENT GAIN
1
V
CE
= 5 V
150°C
−55°C
25°C
300
400
500
Figure 21. Collector Emitter Saturation Voltage
vs. Collector Current
I
C
, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0
0.05
0.30
Figure 22. Base Emitter Saturation Voltage vs.
Collector Current
Figure 23. Base Emitter Voltage vs. Collector
Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.1
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
I
C
/I
B
= 20
150°C
−55°C
25°C
0.4
0.9
I
C
/I
B
= 20
150°C
−55°C
25°C
0.4
0.7
1.1
V
CE
= 5 V
150°C
−55°C
25°C
0.10
0.15
0.20
0.25
1.0
BC846ALT1G Series
www.onsemi.com
8
BC847B, BC848B, BC849B, BC850B, SBC846B, SBC847B, SBC848B
Figure 24. Collector Saturation Region
I
B
, BASE CURRENT (mA)
Figure 25. Base−Emitter Temperature
Coefficient
I
C
, COLLECTOR CURRENT (mA)
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0
10
0
20
0.1
0.4
0.8
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
VB
, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 1.0
10 100
-55°C to +125°CT
A
= 25°C
I
C
= 50 mA I
C
= 100 mA
I
C
= 200 mA
I
C
=
20 mA
I
C
=
10 mA
1.0
Figure 26. Capacitances
V
R
, REVERSE VOLTAGE (VOLTS)
10
Figure 27. Current−Gain − Bandwidth Product
I
C
, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0
2.0 6.0
40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7 1.0 10 202.0
50
307.05.03.00.5
V
CE
= 10 V
T
A
= 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
0.8 4.0 8.0
T
A
= 25°C
C
ob
C
ib
BC846ALT1G Series
www.onsemi.com
9
BC847C, BC848C, BC849C, BC850C, SBC847C
Figure 28. DC Current Gain vs. Collector
Current
I
C
, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
1000
h
FE
, DC CURRENT GAIN
1
V
CE
= 1 V
150°C
−55°C
25°C
300
400
500
600
700
800
900
Figure 29. DC Current Gain vs. Collector
Current
I
C
, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
1000
h
FE
, DC CURRENT GAIN
1
V
CE
= 5 V
150°C
−55°C
25°C
300
400
500
600
700
800
900
Figure 30. Collector Emitter Saturation Voltage
vs. Collector Current
I
C
, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0
0.05
0.30
Figure 31. Base Emitter Saturation Voltage vs.
Collector Current
Figure 32. Base Emitter Voltage vs. Collector
Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.1
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
I
C
/I
B
= 20
150°C
−55°C
25°C
0.4
0.9
I
C
/I
B
= 20
150°C
−55°C
25°C
0.4
0.7
1.1
V
CE
= 5 V
150°C
−55°C
25°C
0.10
0.15
0.20
0.25
1.0
P1-P3P4-P6P7-P9P10-P12P13-P13

BC847BLT1G

Mfr. #:
Buy BC847BLT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 100mA 50V NPN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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