IXFI7N80P Datasheet IXFP7N80P, IXFI7N80P, IXFA7N80P | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 175°C 800 V

V

DGR

T

J

= 25°C to 175°C; R

GS

= 1 MΩ 800 V

V

GS

Continuous ± 30 V

V

GSM

Transient ± 40 V

I

D25

T

C

= 25°C7A

I

DM

T

C

= 25°C, pulse width limited by T

JM

18 A

I

AR

T

C

= 25°C4A

E

AR

T

C

= 25°C20mJ

E

AS

T

C

= 25°C 300 mJ

dv/dt I

S

≤ I

DM

, di/dt ≤ 100 A/μs, V

DD

≤ V

DSS

, 10 V/ns

T

J

≤ 150°C, R

G

= 10 Ω

P

D

T

C

= 25°C 200 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6 mm (0.062 in.) from case for 10 s 300 °C

T

SOLD

Plastic body for 10 s 260 °C

M

d

Mounting torque (TO-220, TO-3P) 1.13/10 Nm/lb.in.

Weight TO-220 3 g

TO-263 2.5 g

G = Gate D = Drain

S = Source TAB = Drain

DS99597E(08/06)

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified) Min. Typ. Max.

BV

DSS

V

GS

= 0 V, I

D

= 250μA 800 V

V

GS(th)

V

DS

= V

GS

, I

D

= 1 mA 3.0 5.0 V

I

GSS

V

GS

= ±30 V, V

DS

= 0 V ±100 nA

I

DSS

V

DS

= V

DSS

25 μA

V

GS

= 0 V T

J

= 125°C 500 μA

R

DS(on)

V

GS

= 10 V, I

D

= 0.5 I

D25

1.44 Ω

Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %

PolarHV

TM

HiPerFET

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Features

z

International standard packages

z

Unclamped Inductive Switching (UIS)

rated

z

Low package inductance

- easy to drive and to protect

Advantages

z

Easy to mount

z

Space savings

z

High power density

IXFA 7N80P

IXFI 7N80P

IXFP 7N80P

V

DSS

= 800 V

I

D25

= 7 A

R

DS(on)

≤≤

≤ 1.44

ΩΩ

Ω

t

rr

≤≤

≤ 250 ns

G

S

(TAB)

TO-263 (IXFA)

TO-220 (IXFP)

D

(TAB)

G

S

G

D

S

(TAB)

Leaded TO-263 (IXFI)

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFA7N80P IXFI7N80P IXFP7N80P

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Min. Typ. Max.

g

fs

V

DS

= 20 V; I

D

= 0.5 I

D25

, pulse test 5 9.5 S

C

iss

1890 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 133 pF

C

rss

13 pF

t

d(on)

28 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 4 A 32 ns

t

d(off)

R

G

= 10 Ω (External) 55 ns

t

f

24 ns

Q

g(on)

32 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 0.5 I

D25

12 nC

Q

gd

9nC

R

thJC

0.62 °C/W

R

thCS

0.5 °C/W

Source-Drain Diode Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

I

S

V

GS

= 0 V 7 A

I

SM

Repetitive 18 A

V

SD

I

F

= I

S

, V

GS

= 0 V, 1.5 V

Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %

t

rr

I

F

= 7A, 250 ns

Q

RM

-di/dt = 100 A/μs 0.3 μC

I

RM

V

R

= 100V 3 A

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

TO-263 (IXFA) Outline

Pins: 1 - Gate 2 - Drain

3 - Source 4 - Drain

TO-220 (IXFP) Outline

Leaded 263 (IXFI) Outline

IXFA7N80P IXFI7N80P IXFP7N80P

Fig. 1. Output Characteristics

@ 25ºC

0

1

2

3

4

5

6

7

012345678910

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7V

6V

5V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

2

4

6

8

10

12

14

16

0 3 6 9 12 15 18 21 24 27 30

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7V

6V

5V

Fig. 3. Output Characteristics

@ 125ºC

0

1

2

3

4

5

6

7

0 2 4 6 8 10 12 14 16 18 20 22 24

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

6V

5V

Fig. 4. R

DS(on)

Normalized to I

D

= 3.5A Value

vs. Junction Temperature

0.4

0.8

1.2

1.6

2

2.4

2.8

3.2

-50-25 0 255075100125150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 7A

I

D

= 3.5A

Fig. 5. R

DS(on)

Normalized to I

D

= 3.5A Value

vs. Drain Current

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

0246810121416

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maximum Drain Current vs.

Case Temperature

0

1

2

3

4

5

6

7

8

-50-250 255075100125150

T

C

- Degrees Centigrade

I

D

- Amperes

IXFI7N80P

IXFI7N80P

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