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IXFI7N80P

P1-P3P4-P4
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFA7N80P IXFI7N80P IXFP7N80P
Fig. 7. Input Admittance
0
1
2
3
4
5
6
7
8
3.4 3.6 3.8 4 4.2 4.4 4.6 4.8 5 5.2 5.4 5.6 5.8 6
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
2
4
6
8
10
12
14
16
18
0123456789
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
2
4
6
8
10
12
14
16
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 400V
I
D
= 3.5A
I
G
= 10mA
Fig. 11. Capacitance
1
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Maximum Transient Thermal
Resistance
0.0
0.1
1.0
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
R
(th)JC
- ºC / W
P1-P3P4-P4

IXFI7N80P

Mfr. #:
Buy IXFI7N80P
Manufacturer:
Description:
MOSFET N-CH 800V 7A TO-263
Lifecycle:
New from this manufacturer.
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