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APTM20SKM08TG

P1-P3P4-P6
APTM20SKM08TG
APTM20SKM08TG – Rev 3 July, 2006
www.microsemi.com 1
–
6
Q1
VBUS
OUT
NTC2
G1
0/VBU S
0/VBUS SENSE
NTC1
S1
VBUS
OUT
OUT
NTC2
NTC1
S1
0/ VB US
0/ VB US
SENSE
0/ VB US
SENSE
G1
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
S
ymbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 200 V
T
c
= 25°C 208
I
D
Continuous Drain Current
T
c
= 80°C 155
I
DM
Pulsed Drain current 832
A
V
GS
Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance 10
mΩ
P
D
Maximum Power Dissipation T
c
= 25°C 781 W
I
AR
Avalanche current (repetitive and non repetitive) 100 A
E
AR
Repetitive Avalanche Energy 50
E
AS
Single Pulse Avalanche Energy 3000
mJ
V
DSS
= 200V
R
DSon
= 8mΩ typ @ Tj = 25°C
I
D
= 208A @ Tc = 25°C
Applicatio
n
• AC and DC motor control
• Switched Mode Power Supplies
Features
• Power MOS 7
®
MOSFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate c harge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outsta ndi ng perfor mance at high freq ue ncy operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
B
uck choppe
r
MOSFET Power Module
APTM20SKM08TG
APTM20SKM08TG – Rev 3 July, 2006
www.microsemi.com 2
–
6
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
V
GS
= 0V,V
DS
= 200V T
j
= 25°C 375
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 160V T
j
= 125°C 1500
µA
R
DS(on)
Drain – Source on Resistance V
GS
= 10V, I
D
= 104A
8 10
mΩ
V
GS(th)
Gate Threshold Voltage V
GS
= V
DS
, I
D
= 5mA 3 5 V
I
GS S
Gate – Source Leakage Current V
GS
= ±30 V, V
DS
= 0V ±150 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
is s
Input Capacitance 14.4
C
oss
Output Capacitance 4.66
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1MHz
0.29
nF
Q
g
Total gate Charge 280
Q
gs
Gate – Source Charge 106
Q
gd
Gate – Drain Charge
V
GS
= 10V
V
Bus
= 100V
I
D
= 208A
134
nC
T
d(on)
Turn-on Delay Ti me 32
T
r
Rise Time 64
T
d(off)
Turn-off Delay Time 88
T
f
Fall Time
Inductive switching @ 125°C
V
GS
= 15V
V
Bus
= 133V
I
D
= 208A
R
G
= 2.5Ω
116
ns
E
on
Turn-on Switching Energy 1698
E
off
Turn-off Switching Energy
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 133V
I
D
= 208A,
R
G
= 2.5Ω 1858
µJ
E
on
Turn-on Switching Energy 1872
E
off
Turn-off Switching Energy
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 133V
I
D
= 208A,
R
G
= 2.5Ω
1972
µJ
Chopper diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage 200 V
T
j
= 25°C 500
I
RM
Maximum Reverse Leakage Current V
R
=200V
T
j
= 125°C 750
µA
I
F
DC Forward Current T
c
= 80°C 180 A
I
F
= 180A
1.1 1.15
I
F
= 360A
1.4
V
F
Diode Forward Voltage
I
F
= 180A T
j
= 125°C
0.9
V
T
j
= 25°C 31
t
rr
Reverse Recovery Time
T
j
= 125°C 60
ns
T
j
= 25°C 180
Q
rr
Reverse Recovery Charge
I
F
= 180A
V
R
= 133V
di/dt = 600A/µs
T
j
= 125°C 750
nC
APTM20SKM08TG
APTM20SKM08TG – Rev 3 July, 2006
www.microsemi.com 3
–
6
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
Transistor 0.16
R
thJC
Junction to Case Thermal Resistance
Diode 0.32
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40 150
T
STG
Storage Temperature Range -40 125
T
C
Operating Case Temperature -40 100
°C
Torque Mounting torque To Heatsink M5 2.5 4.7 N.m
Wt Package Weight 160 g
Temperature sensor NTC
(see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Min Typ Max Unit
R
25
Resistance @ 25°C 50
kΩ
B
25/85
T
25
= 298.15 K 3952
K
−
=
TT
B
R
R
T
11
exp
25
85/25
25
SP4 Package outline (dimensions in mm)
ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
T: Thermistor tempe rature
R
T
: Thermistor value at T
P1-P3P4-P6

APTM20SKM08TG

Mfr. #:
Buy APTM20SKM08TG
Manufacturer:
Microchip / Microsemi
Description:
Discrete Semiconductor Modules Power Module - Mosfet
Lifecycle:
New from this manufacturer.
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