APTM20SKM08TG
APTM20SKM08TG – Rev 3 July, 2006
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6
Delay Times vs Current
t
d(on)
t
d(off)
0
20
40
60
80
100
120
0 50 100 150 200 250 300 350
I
D
, Drain Current (A)
t
d(on)
and t
d(off)
(ns)
V
DS
=133V
R
G
=2.5Ω
T
J
=125°C
L=100µH
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
100
120
140
160
0 50 100 150 200 250 300 350
I
D
, Drain Current (A)
t
r
and t
f
(ns)
V
DS
=133V
R
G
=2.5Ω
T
J
=125°C
L=100µH
Switching Energy vs Current
E
on
E
off
E
off
0
1
2
3
4
0 50 100 150 200 250 300 350
I
D
, Drain Current (A)
E
on
and E
off
(mJ)
V
DS
=133V
R
G
=2.5Ω
T
J
=125°C
L=100µH
E
on
E
off
1
2
3
4
5
6
0 5 10 15 20 25
Gate Resistance (Ohms)
Switching Energy (mJ)
Switching Energy vs Gate Resistance
V
DS
=133V
I
D
=208A
T
J
=125°C
L=100µH
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
25 50 75 100 125 150 175 200
I
D
, Drain Current (A)
Frequency (kHz)
Operating Frequency vs Drain Curren
V
DS
=133V
D=50%
R
G
=2.5Ω
T
J
=125°C
T
C
=75°C
T
J
=25°C
T
J
=150°C
1
10
100
1000
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V
SD
, Source to Drain Voltage (V)
I
DR
, Reverse Drain Current (A)
Source to Drain Diode Forward Voltage
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