J112RL1

J111, J112
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4
r
ds(on)
, DRAIN−SOURCE ON−STATE
RESISTANCE (OHMS)
NOTE 2
The Zero−Gate−Voltage Drain Current (I
DSS
), is the
principle determinant of other J-FET characteristics.
Figure 10 shows the relationship of Gate−Source Off
Voltage (V
GS(off)
and Drain−Source On Resistance
(r
ds(on)
) to I
DSS
. Most of the devices will be within ±10%
of the values shown in Figure 10. This data will be useful
in predicting the characteristic variations for a given part
number.
For example:
Unknown
r
ds(on)
and V
GS
range for an J112
The electrical characteristics table indicates that an J112
has an I
DSS
range of 25 to 75 mA. Figure 10, shows
r
ds(on)
= 52 W for I
DSS
= 25 mA and 30 W for
I
DSS
= 75 mA. The corresponding V
GS
values are 2.2 V
and 4.8 V.
y
fs
, FORWARD TRANSFER ADMITTANCE (mmh
o
C, CAPACITANCE (pF)
r
ds(on)
, DRAIN−SOURCE ON−STATE
RESISTANCE (OHMS)
r
ds(on)
, DRAIN−SOURCE ON−STATE
RESISTANCE (NORMALIZED)
2.0
3.0
5.0
7.0
10
20
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
I
D
, DRAIN CURRENT (mA)
Figure 6. Typical Forward Transfer Admittance
1.0
1.5
2.0
3.0
5.0
7.0
10
15
0.03 0.05 0.1 0.3 0.5 1.0 3.0 5.0 10 30
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 7. Typical Capacitance
200
160
120
80
40
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
V
GS
, GATE−SOURCE VOLTAGE (VOLTS)
Figure 8. Effect of Gate−Source Voltage
On Drain−Source Resistance
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
−70 −40 −10 20 50 80 110 140 170
T
channel
, CHANNEL TEMPERATURE (°C)
Figure 9. Effect of Temperature On
Drain−Source On−State Resistance
J113
J112
J111
T
channel
= 25°C
V
DS
= 15 V
C
gs
C
gd
T
channel
= 25°C
(C
ds
IS NEGLIGIBLE)
I
DSS
= 10
mA
25
mA
50mA 75mA 100mA 125mA
T
channel
= 25°C
I
D
= 1.0 mA
V
GS
= 0
10
I
DSS
, ZERO−GATE−VOLTAGE DRAIN CURRENT (mA)
Figure 10. Effect of I
DSS
On Drain−Source
Resistance and Gate−Source Voltage
20 30 40 50 60
70
80
90
100
110 120 130 140 150
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
100
90
80
70
60
50
40
30
20
10
0
V
GS
, GATE−SOURCE VOLTAGE (VOLTS)
T
channel
= 25°C
r
DS(on)
@ V
GS
= 0
V
GS(off)
J111, J112
http://onsemi.com
5
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
R 0.115 −−− 2.93 −−−
V 0.135 −−− 3.43 −−−
1
STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
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J112RL1

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
JFET 35V 10mA
Lifecycle:
New from this manufacturer.
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