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NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
11 November 2013 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363
(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
Very fast switching
Trench MOSFET technology
ESD protection
Low threshold voltage
3. Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
V
DS
drain-source voltage - - 30 V
V
GS
gate-source voltage
T
j
= 25 °C
-20 - 20 V
I
D
drain current V
GS
= 4.5 V; T
amb
= 25 °C [1] - - 180 mA
Static characteristics (per transistor)
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 100 mA; T
j
= 25 °C - 2.7 4.5 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm
2
.
NXP Semiconductors
NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
NX3020NAKS All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 11 November 2013 2 / 15
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 S1 source TR1
2 G1 gate TR1
3 D2 drain TR2
4 S2 source TR2
5 G2 gate TR2
6 D1 drain TR1
1 32
456
TSSOP6 (SOT363)
017aaa256
D1
S1
G1
D2
S2
G2
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
NX3020NAKS TSSOP6 plastic surface-mounted package; 6 leads SOT363
7. Marking
Table 4. Marking codes
Type number Marking code
[1]
NX3020NAKS Ua%
[1] % = placeholder for manufacturing site code
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
DS
drain-source voltage - 30 V
V
GS
gate-source voltage
T
j
= 25 °C
-20 20 V
V
GS
= 4.5 V; T
amb
= 25 °C [1] - 180 mAI
D
drain current
V
GS
= 4.5 V; T
amb
= 100 °C [1] - 110 mA
I
DM
peak drain current T
amb
= 25 °C; single pulse; t
p
≤ 10 µs - 720 mA
[2] - 260 mWP
tot
total power dissipation T
amb
= 25 °C
[1] - 280 mW

VM800C35A-N

Mfr. #:
Manufacturer:
Bridgetek
Description:
Video IC Development Tools Video Module No Display
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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