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VM800C35A-N

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
NXP Semiconductors
NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
NX3020NAKS All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 11 November 2013 3 / 15
Symbol Parameter Conditions Min Max Unit
T
sp
= 25 °C - 1100 mW
Source-drain diode
I
S
source current T
amb
= 25 °C - 180 mA
Per device
P
tot
total power dissipation T
amb
= 25 °C [2] - 375 mW
T
j
junction temperature -55 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm
2
.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
T
amb
(°C)
- 75 17512525 75- 25
017aaa001
40
80
120
P
der
(%)
0
Fig. 1. Normalized total power dissipation as a
function of ambient temperature
T
amb
(°C)
- 75 17512525 75- 25
017aaa002
40
80
120
I
der
(%)
0
Fig. 2. Normalized continuous drain current as a
function of ambient temperature
NXP Semiconductors
NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
NX3020NAKS All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 11 November 2013 4 / 15
017aaa673
V
DS
(V)
10
-1
10
2
101
10
-1
10
-2
1
I
D
(A)
10
-3
Limit R
DSon
= V
DS
/I
D
t
p
= 100 µs
t
p
= 1 ms
t
p
= 10 ms
t
p
= 100 ms
DC; T
sp
= 25 °C
DC; T
amb
= 25 °C;
drain mounting pad 1 cm
2
I
DM
= single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
[1] - 390 480 K/WR
th(j-a)
thermal resistance
from junction to
ambient
in free air
[2] - 380 430 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
- - 110 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
NXP Semiconductors
NX3020NAKS
30 V, 180 mA dual N-channel Trench MOSFET
NX3020NAKS All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 11 November 2013 5 / 15
017aaa674
t
p
(s)
10
-3
10
2
10
3
10110
-2
10
-1
10
2
10
3
Z
th(j-a)
(K/W)
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa675
t
p
(s)
10
-3
10
2
10
3
10110
-2
10
-1
10
2
10
3
Z
th(j-a)
(K/W)
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
FR4 PCB, mounting pad for drain 1 cm
2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

VM800C35A-N

Mfr. #:
Buy VM800C35A-N
Manufacturer:
Bridgetek
Description:
Video IC Development Tools Video Module No Display
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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