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HGT1S14N36G3VLS

P1-P3P4-P6P7-P8
©2001 Fairchild Semiconductor Corporation HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS
14A, 360V N-Channel,
Logic Level, Voltage Clamping IGBTs
Packages
JEDEC TO-220AB
JEDEC TO-262AA
JEDEC TO-263AB
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
EMITTER
GATE
COLLECTOR
(FLANGE)
EMITTER
GATE
R
2
R
1
COLLECTOR
Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
•T
J
= 175
o
C
• Ignition Energy Capable
Description
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in auto-
motive ignition circuits. Unique features include an active
voltage clamp between the collector and the gate which pro-
vides Self Clamped Inductive Switching (SCIS) capability in
ignition circuits. Internal diodes provide ESD protection for
the logic level gate. Both a series resistor and a shunt
resister are provided in the gate circuit.
The development type number for this device is TA49021.
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
HGTP14N36G3VL TO-220AB 14N36GVL
HGT1S14N36G3VL TO-262AA 14N36GVL
HGT1S14N36G3VLS TO-263AB 14N36GVL
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S14N36G3VLS9A.
December 2001
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS UNITS
Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CER
390 V
Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
ECS
24 V
Collector Current Continuous at V
GE
= 5V, T
C
= +25
o
C. . . . . . . . . . . . . . . . . . . . . . . I
C25
18 A
at V
GE
= 5V, T
C
= +100
o
C. . . . . . . . . . . . . . . . . . . . . .I
C100
14 A
Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
±10 V
Inductive Switching Current at L = 2.3mH, T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . I
SCIS
17 A
at L = 2.3mH, T
C
= + 175
o
C . . . . . . . . . . . . . . . . . . . . . . I
SCIS
12 A
Collector to Emitter Avalanche Energy at L = 2.3mH, T
C
= +25
o
C. . . . . . . . . . . . . . . E
AS
332 mJ
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
100 W
Power Dissipation Derating T
C
> +25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.67 W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-40 to +175
o
C
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
260
o
C
Electrostatic Voltage at 100pF, 1500Ω. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD 6 KV
NOTE: May be exceeded if I
GEM
is limited to 10mA.
©2001 Fairchild Semiconductor Corporation HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
Specifications HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS SYMBOL TEST CONDITIONS
LIMITS
UNITSMIN TYP MAX
Collector-Emitter Breakdown Voltage BV
CER
I
C
= 10mA,
V
GE
= 0V
R
GE
= 1kΩ
T
C
= +175
o
C 320 355 400 V
T
C
= +25
o
C 330 360 390 V
T
C
= -40
o
C 320 350 385 V
Gate-Emitter Plateau Voltage V
GEP
I
C
= 7A,
V
CE
= 12V
T
C
= +25
o
C-2.7-V
Gate Charge Q
G(ON)
I
C
= 7A,
V
CE
= 12V
T
C
= +25
o
C-24-nC
Collector-Emitter Clamp Breakdown
Voltage
BV
CE(CL)
I
C
= 7A
R
G
= 1000Ω
T
C
= +175
o
C 350 380 410 V
Emitter-Collector Breakdown Voltage BV
ECS
I
C
= 10mA T
C
= +25
o
C2428-V
Collector-Emitter Leakage Current I
CER
V
CE
= 250V
R
GE
= 1kΩ
T
C
= +25
o
C-- 25µA
T
C
= +175
o
C - - 250 µA
Collector-Emitter Saturation Voltage V
CE(SAT)
I
C
= 7A
V
GE
= 4.5V
T
C
= +25
o
C - 1.25 1.45 V
T
C
= +175
o
C - 1.15 1.6 V
I
C
= 14A
V
GE
= 5V
T
C
= +25
o
C-1.62.2V
T
C
= +175
o
C-1.72.9V
Gate-Emitter Threshold Voltage V
GE(TH)
I
C
= 1mA
V
CE
= V
GE
T
C
= +25
o
C 1.3 1.8 2.2 V
Gate Series Resistance R
1
T
C
= +25
o
C-75-Ω
Gate-Emitter Resistance R
2
T
C
= +25
o
C 102030kΩ
Gate-Emitter Leakage Current I
GES
V
GE
= ±10V ±330 ±500 ±1000 µA
Gate-Emitter Breakdown Voltage BV
GES
I
GES
= ±2mA ±12 ±14 - V
Current Turn-Off Time-Inductive Load t
D(OFF)I
+
t
F(OFF)I
I
C
= 7A, R
L
= 28Ω
R
G
= 25Ω, L = 550µH,
V
CL
= 300V, V
GE
= 5V,
T
C
= +175
o
C
-7-µs
Inductive Use Test I
SCIS
L = 2.3mH,
V
G
= 5V,
T
C
= +175
o
C12--A
T
C
= +25
o
C17--A
Thermal Resistance R
θJC
--1.5
o
C/W
©2001 Fairchild Semiconductor Corporation HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
FIGURE 5. SATURATION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
FIGURE 6. SATURATION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
I
CE
, COLLECTOR-EMITTER CURRENT (A)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, V
CE
= 10V
20
15
10
5
0
25
2 1345
+25
o
C
+175
o
C
-40
o
C
I
CE
, COLLECTOR-EMITTER CURRENT (A)
40
20
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, T
C
= +25
o
C
0246810
10V
5.0V
4.5V
3.0V
2.5V
4.0V
3.5V
10
0
30
4
V
CE(SAT)
, SATURATION VOLTAGE (V)
I
CE
, COLLECTOR EMITTER CURRENT (A)
25
20
15
10
5
0
30
53210
T
C
= +175
o
C
V
GE
= 5.0V
V
GE
= 4.0V
V
GE
= 4.5V
35
10
+25
o
C
I
CE
, COLLECTOR EMITTER CURRENT (A)
V
CE(SAT)
, SATURATION VOLTAGE (V)
+175
o
C
-40
o
C
15
20
25
30
35
0
5
01234 5
V
GE
= 4.5V
V
CE(SAT)
, SATURATION VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (
o
C)
-25 +25 +75 +125 +175
1.25
1.15
1.05
1.35
V
GE
= 4.0V
V
GE
= 4.5V
V
GE
= 5.0V
I
CE
= 7A
T
J
, JUNCTION TEMPERATURE (
o
C)
V
CE(SAT)
, SATURATION VOLTAGE (V)
-25 +25 +75
+125
+175
2.00
1.75
1.50
V
GE
= 4.5V
V
GE
= 4.0V
V
GE
= 5.0V
I
CE
= 14A
2.25
P1-P3P4-P6P7-P8

HGT1S14N36G3VLS

Mfr. #:
Buy HGT1S14N36G3VLS
Manufacturer:
ON Semiconductor / Fairchild
Description:
Motor / Motion / Ignition Controllers & Drivers Coil Dr 14A 360V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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