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HGT1S14N36G3VLS

P1-P3P4-P6P7-P8
©2001 Fairchild Semiconductor Corporation HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
FIGURE 7. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF CASE TEMPERATURE
FIGURE 8. NORMALIZED THRESHOLD VOLTAGE AS A
FUNCTION OF JUNCTION TEMPERATURE
FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF
JUNCTION TEMPERATURE
FIGURE 10. TURN-OFF TIME AS A FUNCTION OF
JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
+25 +50 +75 +125 +150
T
C
, CASE TEMPERATURE (
o
C)
I
CE
, COLLECTOR-EMITTER CURRENT (A)
0
+100 +175
2
4
6
8
10
12
16
18
V
GE
= 5V
14
20
T
J
, JUNCTION TEMPERATURE (
o
C)
-25
+25 +75 +125 +175
V
GE(TH),
NORMALIZED THRESHOLD VOLTAGE
0.6
0.7
0.8
0.9
1.0
1.1
1.2
I
CE
= 1ma
T
J
, JUNCTION TEMPERATURE (
o
C)
LEAKAGE CURRENT (µA)
1E-1
1E0
1E1
1E2
1E3
1E4
+20 +60 +100 +140
+180
V
ECS
= 20V
V
CES
= 250V
T
J
, JUNCTION TEMPERATURE (
o
C)
t
(OFF)I,
TURN OFF TIME (µs)
6.0
5.0
4.5
4.0
3.5
3.0
+25 +50 + 75 +100 +150 +175+125
5.5
6.5
V
CE
= 300V, V
GE
= 5V
R
GE
= 25Ω, L = 550µH
7.0
R
L
= 37Ω,
I
CE
= 7A
©2001 Fairchild Semiconductor Corporation HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT AS A FUNCTION OF INDUCTANCE
FIGURE 12. SELF CLAMPED INDUCTIVE SWITCHING ENERGY
AS A FUNCTION OF INDUCTANCE
FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves
(Continued)
L, INDUCTANCE (mH)
0
24
6
810
20
10
I
C
, INDUCTIVE SWITCHING CURRENT (A)
15
5
25
+25
o
C
+175
o
C
V
GE
= 5V
0
2
4
6
8
10
L , INDUCTANCE (mH)
E
AS
, ENERGY (mJ)
150
200
250
300
350
400
450
500
550
600
650
+25
o
C
+175
o
C
V
GE
= 5V
C, CAPACITANCE (pF)
0 5 10 15 20 25
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
400
600
800
1400
1600
1800
2000
C
RES
C
OES
C
IES
1200
1000
FREQUENCY = 1MHz
200
0
Q
G
, GATE CHARGE (nC)
12
10
8
6
4
2
0
6
5
1
0
4
3
2
0
5
15
20
25
30
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
V
GE
, GATE-EMITTER VOLTAGE (V)
REF I
G
= 1mA, R
L
= 1.7Ω, T
C
= +25
o
C
10
V
CE
= 12V
V
CE
= 4V
V
CE
= 8V
©2001 Fairchild Semiconductor Corporation HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B
FIGURE 15. NORMALIZED TRANSIENT THERMAL
IMPEDANCE, JUNCTION TO CASE
FIGURE 16. BREAKDOWN VOLTAGE AS A FUNCTION OF
GATE-EMITTER RESISTANCE
Test Circuits
FIGURE 17. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT TEST CIRCUIT
FIGURE 18. CLAMPED INDUCTIVE SWITCHING TIME
TEST CIRCUIT
Typical Performance Curves
(Continued)
t
1
, RECTANGULAR PULSE DURATION (s)
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
0.02
0.05
0.5
Z
θJC
, NORMALIZED THERMAL RESPONSE
0.2
0.1
0.01
t
1
t
2
PD
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θJC
X R
θJC
) + T
C
SINGLE PULSE
R
GE
, GATE-TO- EMITTER RESISTANCE (Ω)
0
2000 4000 6000 8000 10000
325
330
335
340
345
350
355
BV
CER
, COLLECTOR-EMITTER
25
o
C
175
o
C
BKDN VOLTAGE (V)
R
G
G
C
E
V
DD
2.3mH
DUT
R
GEN
= 25Ω
5V
R
GEN
= 50Ω
+
-
V
CC
DUT
300V
10V
C
G
E
R
GE
= 50Ω
1/R
G
= 1/R
GEN
+ 1/R
GE
L = 550µH
R
L
P1-P3P4-P6P7-P8

HGT1S14N36G3VLS

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Buy HGT1S14N36G3VLS
Manufacturer:
ON Semiconductor / Fairchild
Description:
Motor / Motion / Ignition Controllers & Drivers Coil Dr 14A 360V
Lifecycle:
New from this manufacturer.
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