OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

PESD15VS2UT,215

P1-P3P4-P6P7-P9P10-P12P13-P14
2004 Apr 15 3
NXP Semiconductors Product data sheet
Double ESD protection diodes in SOT23
package
PESDxS2UT series
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Non-repetitive current pulse 8/20µ µs exponential decay waveform; see Fig.2.
2. Measured across either pins 1 and 3 or pins 2 and 3.
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PESD3V3S2UT − plastic surface mounted package; 3 leads SOT23
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
P
pp
peak pulse power 8/20 µs pulse; notes 1 and 2
PESD3V3S2UT − 330 W
PESD5V2S2UT − 260 W
PESD12VS2UT − 180 W
PESD15VS2UT − 160 W
PESD24VS2UT − 160 W
I
pp
peak pulse current 8/20 µs pulse; notes 1 and 2
PESD3V3S2UT − 18 A
PESD5V2S2UT − 15 A
PESD12VS2UT − 5 A
PESD15VS2UT − 5 A
PESD24VS2UT − 3 A
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
2004 Apr 15 4
NXP Semiconductors Product data sheet
Double ESD protection diodes in SOT23
package
PESDxS2UT series
ESD maximum ratings
Notes
1. Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3.
2. Measured across either pins 1 and 3 or pins 2 and 3.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
ESD electrostatic discharge
capability
IEC 61000-4-2 (contact discharge);
notes
1 and 2
PESD3V3S2UT 30 kV
PESD5V2S2UT 30 kV
PESD12VS2UT 30 kV
PESD15VS2UT 30 kV
PESD24VS2UT 23 kV
HBM MIL-Std 883
PESDxS2UT series 10 kV
ESD standards compliance
ESD STANDARD CONDITIONS
IEC 61000-4-2; level 4 (ESD); see Fig.3 >15 kV (air); > 8 kV (contact)
HBM MIL-Std 883; class 3 >4 kV
handbook, halfpage
010
e
−t
20
t (µs)
I
pp
(%)
40
120
0
40
80
30
MLE218
100 % I
pp
; 8 µs
50 % I
pp
; 20 µs
Fig.2 8/20 µs pulse waveform according to
IEC 61000-4-5.
001aaa19
1
I
pp
1
00 %
90 %
t
30 ns
60 ns
10 %
t
r
= 0.7 to 1 ns
Fig.3 ElectroStatic Discharge (ESD) pulse
waveform according to IEC 61000-4-2.
2004 Apr 15 5
NXP Semiconductors Product data sheet
Double ESD protection diodes in SOT23
package
PESDxS2UT series
ELECTRICAL CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
RWM
reverse stand-off voltage
PESD3V3S2UT − − 3.3 V
PESD5V2S2UT − − 5.2 V
PESD12VS2UT − − 12 V
PESD15VS2UT − − 15 V
PESD24VS2UT − − 24 V
I
RM
reverse leakage current
PESD3V3S2UT V
RWM
= 3.3 V − 0.7 2 µA
PESD5V2S2UT V
RWM
= 5.2 V − 0.15 1 µA
PESD12VS2UT V
RWM
= 12 V − <0.02 1 µA
PESD15VS2UT V
RWM
= 15 V − <0.02 1 µA
PESD24VS2UT V
RWM
= 24 V − <0.02 1 µA
V
BR
breakdown voltage I
Z
= 5 mA
PESD3V3S2UT 5.2 5.6 6.0 V
PESD5V2S2UT 6.4 6.8 7.2 V
PESD12VS2UT 14.7 15.0 15.3 V
PESD15VS2UT 17.6 18.0 18.4 V
PESD24VS2UT 26.5 27.0 27.5 V
C
d
diode capacitance f = 1 MHz; V
R
= 0 V
PESD3V3S2UT − 207 300 pF
PESD5V2S2UT − 152 200 pF
PESD12VS2UT − 38 75 pF
PESD15VS2UT − 32 70 pF
PESD24VS2UT − 23 50 pF
V
(CL)R
clamping voltage notes 1 and 2
PESD3V3S2UT I
pp
= 1 A − − 7 V
I
pp
= 18 A − − 20 V
PESD5V2S2UT I
pp
= 1 A − − 9 V
I
pp
= 15 A − − 20 V
PESD12VS2UT I
pp
= 1 A − − 19 V
I
pp
= 5 A − − 35 V
PESD15VS2UT I
pp
= 1 A − − 23 V
I
pp
= 5 A − − 40 V
PESD24VS2UT I
pp
= 1 A − − 36 V
I
pp
= 3 A − − 70 V
P1-P3P4-P6P7-P9P10-P12P13-P14

PESD15VS2UT,215

Mfr. #:
Buy PESD15VS2UT,215
Manufacturer:
Nexperia
Description:
TVS Diodes / ESD Suppressors 15V DUAL ESD PROTECT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet