2004 Apr 15 6
NXP Semiconductors Product data sheet
Double ESD protection diodes in SOT23
package
PESDxS2UT series
Notes
1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2.
2. Measured either across pins 1 and 3 or pins 2 and 3.
R
diff
differential resistance
PESD3V3S2UT I
R
= 1 mA − − 400 Ω
PESD5V2S2UT I
R
= 1 mA − − 80 Ω
PESD12VS2UT I
R
= 1 mA − − 200 Ω
PESD15VS2UT I
R
= 1 mA − − 225 Ω
PESD24VS2UT I
R
= 0.5 mA − − 300 Ω
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
GRAPHICAL DATA
10
3
10
2
10
4
P
pp
(W)
10
t
p
(µs)
110
4
10
3
10 10
2
(1)
(2)
Fig.4 Peak pulse power dissipation as a function
of pulse time; typical values.
T
amb
= 25 °C.
t
p
= 8/20 µs exponential decay waveform; see Fig.2.
(1) PESD3V3S2UT and PESD5V2S2UT.
(2) PESD12VS2UT, PESD15VS2UT, PESD24VS2UT
T
j
(°C)
0 20015050 100
001aaa193
0.4
0.8
1.2
P
PP
0
P
PP(25°C)
Fig.5 Relative variation of peak pulse power as a
function of junction temperature; typical
values.
