OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NTLJS3113PT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2016
May, 2016 − Rev. 6
1 Publication Order Number:
NTLJS3113P/D
NTLJS3113P
Power MOSFET
−20 V, −7.7 A, Single P−Channel, 2x2 mm,
WDFN Package
Features
• Recommended Replacement Device − NTLUS3A40P
• WDFN Package Provides Exposed Drain Pad for Excellent Thermal
Conduction
• 2x2 mm Footprint Same as SC−88 Package
• Lowest R
DS(on)
Solution in 2x2 mm Package
• 1.5 V R
DS(on)
Rating for Operation at Low Voltage Logic Level Gate
Drive
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters (Buck and Boost Circuits)
• Optimized for Battery and Load Management Applications in
Portable Equipment such as, Cell Phones, PDA’s, Media Players, etc.
• High Side Load Switch
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
−20 V
Gate−to−Source Voltage V
GS
±8.0 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
−5.8
A
T
A
= 85°C −4.4
t ≤ 5 s T
A
= 25°C −7.7
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C
P
D
1.9
W
t ≤ 5 s 3.3
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25°C
I
D
−3.5
A
T
A
= 85°C −2.5
Power Dissipation
(Note 2)
T
A
= 25°C
P
D
0.7 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
−23 A
Operating Junction and Storage Temperature T
J
, T
STG
−55 to
150
°C
Source Current (Body Diode) (Note 2) I
S
−2.8 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size,
(30 mm
2
, 2 oz Cu).
www.onsemi.com
−20 V
50 mW @ −2.5 V
40 mW @ −4.5 V
R
DS(on)
MAX
−7.7 A
I
D
MAX (Note 1)V
(BR)DSS
75 mW @ −1.8 V
200 mW @ −1.5 V
G
S
P−CHANNEL MOSFET
D
J8 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
J8MG
G
1
2
3
6
5
4
WDFN6
CASE 506AP
MARKING
DIAGRAM
Device Package Shipping
†
ORDERING INFORMATION
NTLJS3113PT1G WDFN6
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
2
3
6
5
4
D
D
G
D
D
S
(Top View)
PIN CONNECTIONS
D
S
S
D
Pin 1
NTLJS3113PTAG
NTLJS3113P
www.onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient – Steady State (Note 3)
R
q
JA
65
°C/W
Junction−to−Ambient – t ≤ 5 s (Note 3)
R
q
JA
38
Junction−to−Ambient – Steady State Min Pad (Note 4)
R
q
JA
180
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm
2
, 2 oz Cu).
MOSFET ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= −250 mA
−20 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
I
D
= −250 mA, Ref to 25°C
−10.1 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
DS
= −16 V, V
GS
= 0 V
T
J
= 25°C −1.0
mA
T
J
= 85°C −10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±8.0 V ±1.0
mA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= −250 mA
−0.45 −0.67 −1.0 V
Negative Gate Threshold
Temperature Coefficient
V
GS(TH)
/T
J
2.68 mV/°C
Drain−to−Source On−Resistance R
DS(on)
V
GS
= −4.5, I
D
= −3.0 A 32 40
mW
V
GS
= −2.5, I
D
= −3.0 A 44 50
V
GS
= −1.8, I
D
= −2.0 A 67 75
V
GS
= −1.5, I
D
= −1.8 A 90 200
Forward Transconductance g
FS
V
DS
= −16 V, I
D
= −3.0 A 5.9 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= −16 V
1329
pF
Output Capacitance C
OSS
213
Reverse Transfer Capacitance C
RSS
120
Total Gate Charge Q
G(TOT)
V
GS
= −4.5 V, V
DS
= −16 V,
I
D
= −3.0 A
13 15.7
nC
Threshold Gate Charge Q
G(TH)
1.5
Gate−to−Source Charge Q
GS
2.2
Gate−to−Drain Charge Q
GD
2.9
Gate Resistance R
G
14.4
W
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
t
d(ON)
V
GS
= −4.5 V, V
DD
= −10 V,
I
D
= −3.0 A, R
G
= 3.0 W
6.9
ns
Rise Time t
r
17.5
Turn−Off Delay Time t
d(OFF)
60
Fall Time t
f
56.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage
V
SD
V
GS
= 0 V, IS = −1.0 A
T
J
= 25°C −0.78 −1.2
V
T
J
= 125°C −0.67
Reverse Recovery Time t
RR
V
GS
= 0 V, d
ISD
/d
t
= 100 A/ms,
I
S
= −1.0 A
70.8 106
ns
Charge Time t
a
14.3
Discharge Time t
b
56.4
Reverse Recovery Time Q
RR
44 nC
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
NTLJS3113P
www.onsemi.com
3
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
1
0.05
32
0.03
0.01
0.08
47
1.3
1.5
1.1
0.9
0.7
10000
0621
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−I
D
, DRAIN CURRENT (AMPS)
0
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
−I
D
, DRAIN CURRENT (AMPS)
1.0 2.01.5
0.02
3.0
Figure 3. On−Resistance versus Drain Current
−I
D
, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
−I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
−I
DSS
, LEAKAGE (nA)
7
−50 50250−25 75 125100
1
212104
3
1
2
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
V
GS
= −1.8 V
V
GS
= 0 V
I
D
= −6 A
V
GS
= −4.5 V
3
0.04
T
J
= 100°C
T
J
= 150°C
2
0
9
1.5
T
J
= 25°C
20
V
GS
= −1.7 V to −8 V
−1.5 V
3
1000
4
4
0
4
0.03
0.02
T
J
= 25°C
150
10
100000
2.5
−1.4 V
−1.3 V
−1.2 V
T
J
= 25°C
V
GS
= −4.5 V
T
J
= −55°C
T
J
= 100°C
0.04
V
GS
= −4.5 V
V
GS
= −2.5 V
6 8 14 16 18
20.5
2.5
5
5
6
5
6
−1.6 V
−1.1 V
8
1
3
5
7
0.07
0.06
6
100
P1-P3P4-P6

NTLJS3113PT1G

Mfr. #:
Buy NTLJS3113PT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET PFET 2X2 20V 9.5A 42MOHM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet