NTLJS3113PT1G

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4
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
5 5 15 20
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
Figure 7. Capacitance Variation
1600
0
V
GS
V
DS
2000
800
010
V
DS
= V
GS
= 0 V
T
J
= 25°C
C
oss
C
rss
2400
2800
C
iss
Figure 8. GateToSource and DrainToSource
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
R
G
, GATE RESISTANCE (OHMS)
1 10 100
1000
1
t, TIME (ns)
100
t
r
t
d(off)
t
d(on)
t
f
10
V
DD
= 15 V
I
D
= 3.0 A
V
GS
= 4.5 V
2.5
0
0
V
SD
, SOURCETODRAIN VOLTAGE (VOLTS)
V
GS
= 0 V
Figure 10. Diode Forward Voltage versus Current
1.0
1
0.6
2
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1 1 100
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
1
100
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
See Note 2, Page 1
SINGLE PULSE
T
C
= 25°C
1 ms
100 ms
10 ms
dc
T
J
= 25°C
0.1
0.01
-V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
0
3
0
Q
G
, TOTAL GATE CHARGE (nC)
5
4
48
I
D
= 3.0 A
T
J
= 25°C
V
GS
Q
GS
Q
GD
QT
2
1
12
8
0
20
12
4
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
16
3
0.80.40.2
I
D
, DRAIN CURRENT (AMPS)
I
s
, SOURCE CURRENT (AMPS)
1200
400
1.5
0.5
T
J
= 150°C
NTLJS3113P
www.onsemi.com
5
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
Figure 12. Thermal Response
t, TIME (sec)
1
1000
0.1
0.2
0.02
D = 0.5
0.05
0.01
SINGLE PULSE
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
A
= P
(pk)
R
q
JA
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
100 1000100.10.0010.00010.000001
0.1
100
10
10.010.00001
EFFECTIVE TRANSIENT THERMAL RESISTANCE
See Note 2 on Page 1
NTLJS3113P
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6
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL AND
IS MEASURED BETWEEN 0.15 AND 0.20mm FROM
TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED PAD AS
WELL AS THE TERMINALS.
5. CENTER TERMINAL LEAD IS OPTIONAL. TERMINAL
LEAD IS CONNECTED TO TERMINAL LEAD # 4.
6. PINS 1, 2, 5 AND 6 ARE TIED TO THE FLAG.
C
A
SEATING
PLANE
D
B
E
0.10 C
A3
A
A1
2X
2X
0.10 C
WDFN6 2x2
CASE 506AP
ISSUE B
DIM
A
MIN MAX
MILLIMETERS
0.70 0.80
A1 0.00 0.05
A3 0.20 REF
b 0.25 0.35
b1
0.65 REF
D
D2
E
E2
0.27 REF
e
0.15 REF
K
L
PIN ONE
REFERENCE
0.08 C
0.10 C
7X
A0.10 C
NOTE 3
L
e
D2
E2
b
B
3
6
6X
1
K
4
6X
0.05 C
4X
J
J1
A0.10 C
b1
B
6X
0.05 C
L2
NOTE 5
L2
J
J1
0.51 0.61
2.00 BSC
1.00 1.20
2.00 BSC
1.10 1.30
0.65 BSC
0.20 0.30
0.20 0.30
BOTTOM VIEW
2.30
6X
PITCH
1
1.25
0.60
0.35
0.65
0.66
6X
0.43
DIMENSIONS: MILLIMETERS
1.10
0.35
0.34
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
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NTLJS3113PT1G

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MOSFET PFET 2X2 20V 9.5A 42MOHM
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