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Table 2. MAXIMUM RATINGS
Rating Symbol Min Max Unit
Input Voltage DC V
in
−42 45 V
Input Voltage (Note 1)
Load Dump − Suppressed
U
s*
60
V
Enable Input Voltage V
EN1,2
−42 45 V
ADJ Input Voltage V
ADJ1,2
−0.3 10 V
CSO Voltage V
CSO1,2
−0.3 7 V
DE, CS and EF Voltages V
DE
, V
CS
V
EF
−0.3 7 V
Output Voltage V
out1,2
−1 40 V
Junction Temperature T
J
−40 150 °C
Storage Temperature T
STG
−55 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Load Dump Test B (with centralized load dump suppression) according to ISO16750−2 standard. Guaranteed by design. Not tested in
production. Passed Class C according to ISO16750−1.
Table 3. ESD CAPABILITY (Note 2)
Rating
Symbol Min Max Unit
ESD Capability, Human Body Model ESD
HBM
−2 2 kV
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 (JS−001−2010)
Field Induced Charge Device Model ESD characterization is not performed on plastic molded packages with body sizes < 50 mm2 due
to the inability of a small package body to acquire and retain enough charge to meet the minimum CDM discharge current waveform
characteristic defined in JEDEC JS−002−2014.
Table 4. LEAD SOLDERING TEMPERATURE AND MSL (Note 3)
Rating
Symbol Min Max Unit
Moisture Sensitivity Level MSL 1
3. For more information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D
THERMAL CHARACTERISTICS (Note 4)
Rating
Symbol Value Unit
Thermal Characteristics (single layer PCB)
Thermal Resistance, Junction−to−Air (Note 5)
Thermal Reference, Junction−to−Lead (Note 5)
R
θJA
R
ψJL
52
9.0
°C/W
Thermal Characteristics (4 layers PCB)
Thermal Resistance, Junction−to−Air (Note 5)
Thermal Reference, Junction−to−Lead (Note 5)
R
θJA
R
ψJL
31
10
°C/W
4. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
5. Values based on copper area of 645 mm
2
(or 1 in
2
) of 1 oz copper thickness and FR4 PCB substrate. Single layer − according to JEDEC51.3,
4 layers − according to JEDEC51.7
Table 5. RECOMMENDED OPERATING RANGES
Rating Symbol Min Max Unit
Input Voltage (Note 6) V
in
4.4 40 V
Nominal Output Voltages V
out_nom1,2
3.3 20 V
Output Current Limit (Note 7) I
LIM1,2
10 300 mA
Junction Temperature T
J
−40 150 °C
Current Sense Output (CSO) Capacitor C
CSO1,2
1 4.7
mF
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
6. Minimum V
in
= 4.4 V or (V
out1,2
+ 0.5 V), whichever is higher.
7. Corresponding R
CSO1,2
is in range from 25.5 kW down to 850 W.
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Table 6. ELECTRICAL CHARACTERISTICS V
in
= 13.5 V, V
EN1,2
= 3.3 V, V
DE
= 0 V, R
CSO1,2
= 0 W, C
CSO1,2
= 1 mF, C
in
= 1 mF,
C
out1,2
= 10 mF, Min and Max values are valid for temperature range −40°C v T
J
v +150°C unless noted otherwise and are guaranteed
by test, design or statistical correlation. Typical values are referenced to T
J
= 25°C (Note 8)
Parameter
Test Conditions Symbol Min Typ Max Unit
REGULATOR OUTPUTS
Output Voltage (Accuracy %) (Note 9)
V
in
= V
in_min
to 40 V
I
out1,2
= 5 mA to 200 mA
V
out1,2
−3 +3
%
Line Regulation (Note 9) V
in
= V
in_min
to (V
out_nom1,2
+ 20 V)
I
out1,2
= 5 mA
Reg
line1,2
0.1 1.0
%
Load Regulation V
in
= (V
out_nom1,2
+ 8.5 V)
I
out1,2
= 5 mA to 200 mA
Reg
load1,2
0.4 1.4
%
Dropout Voltage (Note 10) V
out_nom1,2
= 5 V, I
out1,2
= 200 mA
V
DO1,2
= V
in
− V
out1,2
V
DO1,2
250 500 mV
DISABLE AND QUIESCENT CURRENTS
Disable Current
V
EN1,2
= 0 V, V
out_nom1,2
= 5 V,
−40°C v T
J
v +125°C
I
DIS
0.1 10
mA
Quiescent Current, I
q
= I
in
− (I
out1
+I
out2
) I
out1
= I
out2
= 500 mA, V
in
= (V
out_nom
+ 8.5 V) I
q
0.6 1.0 mA
Quiescent Current, I
q
= I
in
– (I
out1
+I
out2
) I
out1
= I
out2
= 200 mA, V
in
= (V
out_nom
+ 8.5 V) I
q
15.5 25 mA
CURRENT LIMIT PROTECTION
Current Limit
V
out1,2
=
0.9 x V
out_nom1,2
V
in
= (V
out_nom1,2
+ 8.5 V)
I
LIM1,2
300 mA
PSRR & NOISE
Power Supply Ripple Rejection (Note 11)
f = 100 Hz, 0.5 V
p−p1,2
PSRR
1,2
75 dB
Output Noise Voltage (Note 11) f = 10 Hz to 100 kHz, C
b1,2
= 10 nF V
n1,2
137
mV
rms
ENABLE
Enable Input Threshold Voltage
Logic Low (OFF)
Logic High (ON)
V
out1,2
v
0.1 V
V
out1,2
w
0.9 x V
out_nom1,2
(V
out_nom1,2
= 5 V)
V
th(EN1,2)
0.99
1.8
1.9
2.31
V
Enable Input Current V
EN1,2
= 3.3 V, V
out_nom1,2
= 5 V I
EN1,2
2 8 20
mA
Turn On Time
from Enable ON to 90 % of V
out
I
out1,2
= 100 mA, C
b1,2
= 10 nF,
R
n1
= 82 kW, R
n2
= 27 kW
t
on
1.7
ms
OUTPUT CURRENT SENSE
CSO Voltage Level at Current Limit
V
out1,2
= 0.9 x V
out_nom1,2
,
(V
out_nom1,2
= 5 V) R
CSO1,2
= 1 kW
V
CSO_I
lim1,2
2.448
(−4%)
2.55 2.652
(+4%)
V
CSO Transient Voltage Level
C
CSO1,2
= 4.7 mF, R
CSO1,2
= 1 kW
I
out1,2
pulse from 10 mA to 300 mA, tr = 1 ms
V
CSO1,2
3.3
V
Output Current to CSO Current Ratio
(Note 11, 12)
V
CSO1,2
= 2 V, I
out1,2
= 1 mA to 10 mA
(V
out_nom1,2
= 5 V)
I
out1,2
/
I
CSO1,2
(−5%)
98
(+5%)
Output Current to CSO Current Ratio
(Note 12)
V
CSO1,2
= 2 V, I
out1,2
= 10 mA to 300 mA
(V
out_nom1,2
= 5 V)
I
out1,2
/
I
CSO1,2
(−5%)
100
(+5%)
CSO Current at no Load Current
V
CSO1,2
= 0 V, I
out1,2
= 0 mA,
(V
out_nom1,2
= 5 V)
I
CSO_off1,2
10
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
8. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at T
A
[ T
J
. Low duty
cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
9. Minimum input voltage V
in_min
is 4.4 V or (V
out_nom1,2
+ 1 V) whichever is higher. V
out_nom1,2
measured at ADJ1,2 pin due to excluding
R
n1
and R
n2
accuracy.
10.Measured when the output voltage V
out1,2
has dropped by 2% of V
out_nom1,2
from the nominal valued obtained at V
in
= V
out1,2
+ 8.5 V.
11. Values based on design and/or characterization.
12.Not guaranteed in dropout.
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Table 6. ELECTRICAL CHARACTERISTICS V
in
= 13.5 V, V
EN1,2
= 3.3 V, V
DE
= 0 V, R
CSO1,2
= 0 W, C
CSO1,2
= 1 mF, C
in
= 1 mF,
C
out1,2
= 10 mF, Min and Max values are valid for temperature range −40°C v T
J
v +150°C unless noted otherwise and are guaranteed
by test, design or statistical correlation. Typical values are referenced to T
J
= 25°C (Note 8)
Parameter UnitMaxTypMinSymbolTest Conditions
DIAGNOSTICS
Overcurrent Voltage Level Threshold
V
out_nom1,2
= 5 V, R
CSO1,2
= 1 kW
V
OC1,2
92 95 98 % of
V
CSO_
Ilim1,2
Short To Battery (STB) Voltage
Threshold in OFF state
V
in
= 4.4 V to 18 V, I
out1
= I
out2
= 0 mA,
V
DE
= 3.3 V
V
STB1,2
2 3 4 V
Open Load (OL) Current Threshold
in OFF state
V
in
= 4.4 V to 18 V, V
DE
= 3.3 V I
OL1,2
5.0 10 25 mA
Diagnostics Enable Threshold Voltage
Logic Low
Logic High
V
th(DE)
0.99
1.8
1.9
2.31
V
Channel Select Threshold Voltage
Logic Low
Logic High
V
th(CS)
0.99
1.8
1.9
2.31
V
Error Flag Low Voltage I
EF
= −1 mA V
EF_Low
0.04 0.4 V
THERMAL SHUTDOWN
Thermal Shutdown Temperature
(Note 11)
I
out1
= I
out2
= 5 mA, V
out_nom1,2
= 5 V,
each channel measured separately
T
SD1,2
150 175 195 °C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
8. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at T
A
[ T
J
. Low duty
cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
9. Minimum input voltage V
in_min
is 4.4 V or (V
out_nom1,2
+ 1 V) whichever is higher. V
out_nom1,2
measured at ADJ1,2 pin due to excluding
R
n1
and R
n2
accuracy.
10.Measured when the output voltage V
out1,2
has dropped by 2% of V
out_nom1,2
from the nominal valued obtained at V
in
= V
out1,2
+ 8.5 V.
11. Values based on design and/or characterization.
12.Not guaranteed in dropout.

NCV47821PAAJR2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
LDO Voltage Regulators 3.3V TO 20V ADJUSTABLE DU
Lifecycle:
New from this manufacturer.
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