© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 3
1 Publication Order Number:
MMBF5484LT1/D
MMBF5484LT1
Preferred Device
JFET Transistor
N−Channel
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Gate Voltage V
DG
25 Vdc
Reverse Gate−Source Voltage V
GS(r)
25 Vdc
Forward Gate Current I
G(f)
10 mAdc
Continuous Device Dissipation at or Below
T
C
= 25°C
Linear Derating Factor
P
D
200
2.8
mW
mW/°C
Storage Channel Temperature Range T
stg
−65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
556 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
http://onsemi.com
SOT−23 (TO−236)
CASE 318
STYLE 10
Device Package Shipping
†
ORDERING INFORMATION
MMBF5484LT1 SOT−23 3,000 / Tape & Ree
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MMBF5484LT1G SOT−23
(Pb−Free)
3,000 / Tape & Ree
Preferred devices are recommended choices for future use
1
2
3
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
M6B M G
G
M6B = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
2 SOURCE
3
GATE
1 DRAIN
